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Method for preparing Ce<3+>-activated scintillation glass in air atmosphere

A technology of flashing glass and air atmosphere, applied in glass manufacturing equipment, glass molding, manufacturing tools, etc., can solve the problems of increasing the cost of glass preparation and increasing the complexity of glass preparation process, so as to simplify the preparation process and manufacturing cost, chemical The effect of easy adjustment of components and simple preparation process

Active Publication Date: 2014-09-24
JINGGANGSHAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But this reducing atmosphere increases the complexity of the glass preparation process, and also increases the cost of glass preparation

Method used

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  • Method for preparing Ce&lt;3+&gt;-activated scintillation glass in air atmosphere
  • Method for preparing Ce&lt;3+&gt;-activated scintillation glass in air atmosphere
  • Method for preparing Ce&lt;3+&gt;-activated scintillation glass in air atmosphere

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Experimental program
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Effect test

Embodiment 1

[0031] 1. Preparation process

[0032] The first step: the borate scintillation glass formula of embodiment 1 is 32Li 2 O-64B 2 o 3 -4Gd 2 o 3 -0.25Ce 2 o 3 (X.Sun, et al., Nucl.Instrum.Meth.A, tosubmit), luminescent center Ce 3+ ions from CeO 2 introduce. In order to reflect the content of the patent of the present invention, undoped (0%) and externally doped 25% Si were prepared under the same conditions 3 N 4 (concentration in CeO 2 Concentration is reference, the same below) Two pieces of scintillation glass with strong reducing agent;

[0033] Step 2: Mix the formula thoroughly and melt it in the air atmosphere at 1000°C for 1 hour by high-temperature melting method;

[0034] Step 3: Pour the above melt into a preheated 300°C stainless steel mold for casting;

[0035] Step 4: Place the above glass in a muffle furnace at 370°C for 5 hours for annealing treatment, and then naturally cool to room temperature with the furnace to obtain the scintillation glass sam...

Embodiment 2

[0042] Embodiment 2 borosilicate scintillation glass component is 25B 2 o 3 -30SiO 2 -15BaO-29Gd 2 o 3 -1Ce 2 o 3 (Source of components: C.Jiang, P.Deng, J.Zhang, F.Gan, Phys.Lett.A323(2004)323-328), luminescent center Ce 3+ ions from CeO 2 introduce. In order to reflect the content of the patent of the present invention, undoped (0%) and externally doped 370% Si were prepared under the same conditions. 3 N 4 Two pieces of scintillating glass with strong reducing agent, the melting atmosphere is air, the melting temperature is 1470°C, the holding time is 3h, and the glass is annealed in a muffle furnace at 650°C for 12h after forming.

[0043] figure 2 Be the photoluminescence collection of collections (excitation wavelength 340nm) of embodiment 2 borosilicate scintillating glass, from figure 2 It can be seen that a broad peak located between 350-600 nm corresponds to the Ce 3+ The nanosecond optical transition of ions 5d-4f has the strongest emission peak near 4...

Embodiment 3

[0045] Embodiment 3 phosphate scintillation glass component is 80P 2 o 5 -10Na 2 O-10Gd 2 o 3 -0.6CeO 2 (Component sources: Zhong Jiuping, Zhou Jianbang, Yu Jianyong, Liang Hongbin, Su Qiang, Gong Bin, Liu Mingbiao, Liu Revolution, Lai Zhiyuan, Chinese invention patent, CN103319087A), luminescent center Ce 3+ ions from CeO 2 introduce. In order to reflect the patent content of the present invention, undoped (0%) and externally doped 5% Si were prepared under the same conditions 3 N 4 Strong reducing agent two pieces of scintillation glass, and specially CeO 2 The concentration is increased from 0.2mol% in the original patent to 0.6mol%, the melting atmosphere is air, the melting temperature is 1250°C, the holding time is 0.5h, and the glass is annealed in a 400°C muffle furnace for 4h after forming.

[0046] image 3 It is the photoluminescence spectrum (excitation wavelength 321nm) of the phosphate scintillation glass of Example 3. The broad peak between 330-450nm ...

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Abstract

The invention relates to a method for preparing Ce<3+>-activated scintillation glass in an air atmosphere. The scintillation glass comprises traditional borate, silicate, phosphate, germanate and other scintillation glass systems. After a right amount of high-reducibility Si3N4 raw material is doped according to the glass composition, the Ce<3+>-activated scintillation glass can be prepared in the air atmosphere, wherein the concentration of the Si3N4 (on the basis of the CeO2 concentration) is 0.5-400 wt%. On one hand, the Ce<3+>-activated scintillation glass can be directly prepared in the air atmosphere without establishing a reducing atmosphere, thereby greatly lowering the preparation technique and manufacturing cost of the scintillation glass; and on the other hand, due to the inherent transparency, the glass has the characteristics of simple preparation technique and adjustable composition, can implement low cost, large volume and the like, and thus, has important application value in X-ray medical imaging, industrial on-line detection, national security monitoring, high-energy physical and nuclear physical experiments, and other ray detection fields.

Description

technical field [0001] The invention belongs to the field of luminescent materials, and relates to a method for preparing scintillation glass materials, especially Ce in the air 3+ Preparation method of ion-activated scintillation glass. Background technique [0002] Scintillation materials are photofunctional materials that emit visible light after absorbing high-energy rays. In recent years, they have been widely used in high-energy physics, nuclear physics, astrophysics, geophysics, industrial flaw detection, medical imaging, and safety testing. [0003] Scintillation crystals are currently the most studied and widely used scintillators, such as Bi 4 Ge 3 o 12 (BGO), CeF 3 , PbWO 4 (PWO) etc. However, scintillation crystals have disadvantages such as complex preparation process, long growth cycle, high cost, and difficulty in growing large-sized single crystals. In particular, traditional crystal growth techniques are difficult to ensure high concentration and unifo...

Claims

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Application Information

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IPC IPC(8): C03B19/02C03C3/15C03C3/068C03C3/16C03C3/253C03C4/00
Inventor 孙心瑗余晓光王文峰胡强林杨庆梅
Owner JINGGANGSHAN UNIVERSITY
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