Low-temperature poly-silicon TFT array substrate, manufacturing method thereof and display device

Abstract

The invention discloses a low-temperature poly-silicon TFT array substrate, a manufacturing method of the low-temperature poly-silicon TFT array substrate and a display device. The manufacturing method comprises the steps that based on the step type photoresist technology, a poly-silicon active layer and a poly-silicon storage capacitor lower electrode plate are formed on the substrate at the same time on the basis of the primary photolithography technique; a gate insulation layer is formed on the poly-silicon active layer and the poly-silicon storage capacitor lower electrode plate; a metal layer is formed on the gate insulation layer, and is etched to form a grid electrode, a grid wire connected with the grid electrode, a source electrode, a drain electrode and a data line connected with the source electrode and the drain electrode; a passivation layer, a photoresist layer and a pixel electrode layer are formed in sequence, picture composition fabrication processing is carried out on the passivation layer, the photoresist layer and the pixel electrode layer, inter-layer insulation layer via holes and patterns of a pixel electrode are formed on the basis of the primary photolithography technique; a pixel definition layer is formed on the pixel electrode. According to the low-temperature poly-silicon TFT array substrate, the manufacturing method of the low-temperature poly-silicon TFT array substrate and the display device, the frequency of the photolithography technique on the low-temperature poly-silicon TFT array substrate is reduced, the technique yield is improved, and technique cost is lowered.

Description

technical field [0001] The present invention relates to the technical field of preparation of active matrix organic light-emitting diode displays, in particular to a low-temperature polysilicon thin film field-effect transistor (Thin Film Transistor, TFT) array substrate and a preparation method thereof, and a display having the low-temperature polysilicon thin film field-effect transistor array substrate device. Background technique [0002] Compared with liquid crystal displays, organic light-emitting diode displays have the advantages of fast response, light weight, bendability and wide viewing angles. The active matrix organic light emitting diode (Active Matrix Organic Light Emitting Diode, AMOLED) has the advantages of small driving current and low power consumption, and is suitable for high-resolution displays. The active matrix organic light emitting diode architecture can be driven by amorphous silicon, polysilicon, oxide semiconductor or organic thin film transist...

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Problems solved by technology

[0011] In summary, at least 8 to 9 photolithography processes are required to form figure 1 The shown low-temperature polysilicon thin film field effect transistor array substrate includes a polysilicon active layer, a doped storage capacitor, a gate, an interlayer insulating layer contact hole, a source-drain electrode, a passivation layer via hole, a planarization layer, a pixel electrode and The pixel definition layer leads to longer process time and lower process yield, which makes the manufacturing process complicated and the manufacturing cost is higher

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