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Sealing resin composition and electronic device using same

A technology of resin composition and phenolic resin, applied in the direction of circuits, electrical components, electrical solid devices, etc., can solve the problems of reducing weight reduction rate and so on

Active Publication Date: 2014-11-05
SUMITOMO BAKELITE CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, in semiconductor encapsulation materials with high functional group density, it is disadvantageous to lower the weight loss rate

Method used

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  • Sealing resin composition and electronic device using same
  • Sealing resin composition and electronic device using same
  • Sealing resin composition and electronic device using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0303] Weigh respectively epoxy resin 1 (8.75 mass parts), phenolic resin curing agent 1 (5.14 mass parts), inorganic filler material 1 (75.00 mass parts), inorganic filler material 2 (10.00 mass parts), curing accelerator 3 (0.32 parts by mass), silane coupling agent 1 (0.20 parts by mass), release agent 1 (0.20 parts by mass), coloring agent 1 (0.40 parts by mass), after mixing the above materials with a mixer, use the surface temperature of 95 ° C and 25 The kneading was carried out by two rollers at ℃ to obtain a kneaded product. Next, the kneaded product was cooled and pulverized to obtain the resin composition of Example 1.

Embodiment 2～13、 comparative example 1～4

[0305] Resin compositions of Examples 2-13 and Comparative Examples 1-4 were obtained in the same manner as in Example 1 above except that the types and compounding amounts of the raw materials were changed as shown in Table 1.

[0306] 3. Evaluation

[0307] The mold release agent used and the obtained resin compositions of each Example and each Comparative Example were evaluated by the following methods.

[0308] 3-1. Evaluation of 5% weight loss temperature (Td5)

[0309] Put 10 mg of the sample (release agent) in a Pt sample pan, and measure the thermogravimetry from 30°C to 400°C at 10°C / min under nitrogen flow using a TG·DTA measuring device (manufactured by Seiko Instruments, Inc., EXSTAR7000 type) Decrease, the temperature at which the sample loses 5% of its initial weight (Td5) is determined.

[0310] 3-2. Swirl length (SF) evaluation

[0311] Using a low-pressure transfer molding machine (manufactured by Kohtaki Precision Machine Co., Ltd, "KTS-15"), in a mold for...

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Abstract

Provided are: a resin composition for sealing electronic components which comprises a phenol resin curing agent, an epoxy resin, and a mold releasing agent with a 5% weight loss temperature of 240°C or more; a resin composition for sealing electronic components which comprises an epoxy resin and a mold releasing agent with a 5% weight loss temperature of 240°C or more; a sealing resin composition for sealing electronic components which comprises a phenol resin curing agent, an epoxy resin, and a mold releasing agent with a 5% weight loss temperature of 240°C or more, the glass transition temperature (Tg) of a cured product of the sealing resin composition being 200°C or more, and the weight loss rate of the cured product when heated in an ambient atmosphere at 200°C for 1,000 hours is 0.3% or less; and an electronic device which comprises electronic components that are sealed with said resin composition.

Description

technical field [0001] The present invention relates to a resin composition for encapsulation and an electronic device using the resin composition for encapsulation. More specifically, it relates to a resin composition for encapsulating electronic components such as semiconductors, and an electronic device having electronic components encapsulated using such a resin composition. Background technique [0002] In recent years, SiC / GaN power semiconductor devices equipped with elements using SiC (silicon carbide) or GaN (gallium nitride) (semiconductor devices equipped with elements using SiC or GaN) have been (referred to as SiC / GaN power semiconductor device) has attracted attention (for example, refer to Patent Document 1). [0003] Such elements not only greatly reduce power loss compared with conventional elements using Si, but also can operate at higher voltages, higher currents, and high temperatures of 200°C or higher. Therefore, development in applications to which c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G59/18C08G59/06C08G59/62C08G59/68
CPCC08G59/621C08G59/245C08G59/3218C08L63/00H01L2224/32245H01L2224/48091H01L2224/48247H01L2224/73265H01L2224/45144H01L23/293H01L2224/45139H01L2224/45147H01L2224/45124H01L2924/181C08L2203/206C08L2205/06H01L2924/00014H01L2924/00H01L2924/00012C08G59/063H01L23/295
Inventor 田部井纯一
Owner SUMITOMO BAKELITE CO LTD
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