Dust detection system and dust detection method

Abstract

The present invention discloses a dust detection system for detecting dust in a cavity of a semiconductor device, comprising: an ion emission system for providing an ion beam to a wafer; an electron emission system for emitting an electron beam, and the electron beam is connected to the wafer The ion beams intersect in the cavity; the electron collection system is used to collect the remaining electrons after the electron beam and the ion beam meet, and send out the remaining electron information; the electron detection system is used to receive the remaining electron information , and after detecting the change of the electron flow of the remaining electrons, send detection information; the judgment system judges whether the electron flow of the remaining electrons changes suddenly according to the detection information. The invention also discloses a dust detection method, which can effectively detect whether ions have been implanted into non-target positions and arouse dust, greatly reducing the number of manual screenings, while ensuring detection accuracy, thereby reducing the cost of manpower, material resources, and financial resources. waste of resources and further increase productivity.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a dust detection system and a dust detection method. Background technique [0002] At present, in semiconductor manufacturing, the feature size of devices is getting smaller and smaller, so the corresponding process requirements for semiconductors are also getting higher and higher. Among them, the control of dust (particle) during the process is critical to controlling the yield of devices. One factor is the great challenge faced by semiconductor process manufacturing. [0003] Generally, the manufacturing process of semiconductor devices needs to go through multiple stages. For example, the preparation of a wafer needs to go through the steps of active area preparation, gate preparation, through-hole preparation, and interconnection preparation. Different processes are carried out in the steps. In the preparation of the active region, processes such as photolithography...

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Problems solved by technology

[0007] However, the long-term research of the inventors of the present application has found that this method has the following problems: not every energy jump will cause ions to be injected into non-target positions and stir up dust. Maybe there is only one energy jump, but this time the energy jump just causes Ions are implanted into non-target positions and arouse dust. If manual screening is not performed due to the small number of cumulative energy jumps, it will cause a decrease in the pass rate of the CP or scrap the wafer; there may be multiple energy jumps, but these multiple energy jumps None of them inject ions into non-target positions and stir up dust. If manual screening is performed due to the large number of accumulated energy jumps, it will consume a lot of human, material and financial resources that do not need to be consumed.

This is all due to the bad consequences caused by the inaccurate detection results obtained by using the number of accumulated energy beats for detection

[0008] On the other hand, it is not easy to set the threshold of the number of times of cumulative energy jumps. If the threshold is set higher, it may reduce the pass rate of CP or cause more wafers to be scrapped; if the threshold is set lower, the CP can be increased. The pass rate and the probability of chip scrapping are reduced, but it brings a very heavy workload to the equipment engineering design and process engineers, consumes a lot of manpower, financial resources, and material resources, and most of the time, although the energy jumps, it is actually not detected. Dust, therefore, leads to a reduction in the success rate of detection or the efficiency of detection

And it will further reduce the production efficiency

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