Transparent conductive electrode and preparation method thereof, and OLED display device
A technology for transparent conductive electrodes and display devices, which is applied in electric solid devices, semiconductor devices, organic semiconductor devices, etc., can solve the problem that transparent conductive electrodes cannot simultaneously integrate conductivity, light transmittance and ductility.
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[0039] Embodiments of the present invention provide a method for preparing a transparent conductive electrode, such as figure 1 As shown, the method includes the following steps:
[0040] S01, the mixed solution doped with polymer solution is prepared on the substrate to form tungsten trioxide (WO) doped polymer by solution method 3 ) dielectric layer; wherein, the surface tension of the mixed solution is 10-50mN / m.
[0041] Here, due to the final preparation of WO doped with the polymer through the above mixed solution 3 Dielectric layer, therefore, in the mixed solution, besides including the polymer solution, it should also include the 3 solution, such as tungstic acid solution.
[0042] On this basis, a solution method was used to prepare WO 3 The dielectric layer is: the above mixed solution is coated on the substrate, for example, by spin coating, and then the WO doped with the polymer is formed through a related process. 3 Dielectric.
[0043] Wherein, due to the ...
Embodiment 1
[0066] Example 1, a 7nm Ag electrode layer was prepared by vacuum thermal evaporation, the surface roughness Rq was measured with an atomic force microscope (AFM), the surface resistance was measured with a four-probe method, and the transmittance was tested with an optical transmittance tester. rate, the test results are shown in the first row of Table 1.
Embodiment 2
[0067] Embodiment two, Na 2 WO 4 The aqueous solution is passed through the strong acid cation exchange resin to obtain H 2 WO 4 Solution, 10mL concentration of 1mol / L H 2 WO 4 The solution was coated on the substrate by spin coating, and after baking at 200°C for 1 hour, a 20nm WO 3 Dielectric layer, and finally prepare a 10nm Ag electrode layer by vacuum thermal evaporation; use an atomic force microscope to test the surface roughness Rq, use the four-probe method to test the surface resistance, and use an optical transmittance tester to test the transmittance. The test results are shown in the second row of Table 1.
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