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Preparation method of polycrystalline silicon

A production method and polysilicon technology, applied in chemical instruments and methods, silicon compounds, sustainable manufacturing/processing, etc., can solve problems such as difficult to replace each other, and achieve obvious competitive advantages, significant energy saving and consumption reduction, and low cost effects

Inactive Publication Date: 2014-12-24
潘龙祥
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Problems solved by technology

[0003] In the next 15-20 years, the investment for polysilicon production using the improved Siemens process will exceed US$100 billion. The production of solar-grade polysilicon will still be dominated by the improved Siemens process. The improved Siemens process is still the most mature, reliable, and The process with the fastest production speed is in a long-term competitive state with other types of production processes, and it is difficult to replace each other

Method used

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Embodiment Construction

[0010] The present invention will be further described below by specific examples.

[0011] The equipment used in the production method of polysilicon of the present invention mainly includes: hydrogen chloride synthesis furnace, trichlorosilane ebullating bed pressurized synthesis furnace, trichlorosilane hydrolysis gel treatment system, trichlorosilane crude distillation, rectification tower purification system, silicon Core furnace, power-saving reduction furnace, phosphorus detection furnace, silicon rod cutting machine, corrosion, cleaning, drying, packaging system device, reduction tail gas dry recovery device; others include analysis and testing instruments, control instruments, heat energy conversion station, compressed air Station, circulating water station, transformation and distribution station, purification plant, etc.;

[0012] (1) Quartz sand is smelted and purified to 98% in an electric arc furnace to produce industrial silicon, and its chemical reaction SiO2+C...

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Abstract

The invention provides a preparation method of polycrystalline silicon, and belongs to the technical field of solar silicon wafer preparation. The preparation method is achieved by the following technical scheme: smelting and purifying silica sand to 98% in an electric arc furnace, and generating industrial silicon; crushing the industrial silicon and reacting by using anhydrous hydrogen chloride (HCl) in a fluidized bed reactor, so as to generate trichlorosilane (SiHCl3), wherein the reaction temperature is 300 DEG C, and a gaseous mixture (H2, HCl, SiHCl3, SiCl4 and Si) are formed by reaction; filtering silicon powder from the gaseous mixture; condensing SiHCl3 and SiCl4, returning gaseous H2 and HCl to reaction or discharging into atmosphere, and then decomposing condensates SiHCl3 and SiCl4; and purifying trichlorosilane; and carry out reducing deposition on the purified trichlorosilane with high-purity SiHCl3 in H2 atmosphere by adopting a high-temperature reduction process, thereby generating polycrystalline silicon. The preparation method of the polycrystalline silicon has the advantages of significant energy conservation and consumption reduction, low cost and good quality; by adopting a comprehensive utilization technique, the environment is not polluted; and the method has obvious competitive advantages.

Description

technical field [0001] The invention belongs to the technical field of making solar silicon chips, and in particular relates to a method for making polysilicon. Background technique [0002] Polysilicon is refined from metallurgical grade silicon with low silicon purity. Since the main and auxiliary raw materials used in each polysilicon production plant are not the same, the production process technology is different; and the corresponding technical and economic indicators, product quality indicators, uses, and products of polysilicon products There are also differences in detection methods and process safety, each with its own technical characteristics and technical secrets. Generally speaking, the main traditional processes for polysilicon production in the world at present are: improved Siemens method, silane method and fluidized bed method. The improved Siemens method is currently the mainstream production method, and the polysilicon produced by this method accounts for...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/021
CPCY02P20/10
Inventor 潘龙祥
Owner 潘龙祥
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