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Weakly acidic copper polishing solution applicable to low downforce

A polishing liquid and weakly acidic technology, which is applied in the direction of polishing compositions containing abrasives, etc., to achieve high removal rate, solve the problem of particle residue, and the effect of low price

Inactive Publication Date: 2015-01-07
SHENZHEN LEAGUER MATERIAL +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above-mentioned patent mainly considers how to increase the removal rate of copper materials under low down pressure conditions, and how to achieve a copper polishing solution with high removal rate, less particle residue, and no ion pollution under low down pressure conditions, which is less corrosive to equipment, needs further development Research

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  • Weakly acidic copper polishing solution applicable to low downforce
  • Weakly acidic copper polishing solution applicable to low downforce
  • Weakly acidic copper polishing solution applicable to low downforce

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Experimental program
Comparison scheme
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specific Embodiment

[0030] The configured polishing liquid is used for polishing experiments, and the polishing experiment parameters are as follows:

[0031] Polishing machine: 12-inch chemical mechanical polishing machine (Strasbaugh 6EG type), equipped with 1 polishing head, can polish 1 piece of 12-inch copper-plated sheet (customized from Huali Semiconductor, the thickness of the copper-plated layer is 2 microns);

[0032] Polishing turntable speed: 100 rpm;

[0033] Polishing head speed: 95 rpm;

[0034] Polished copper-plated sheet specifications: diameter 300mm;

[0035] Polishing time: 1min;

[0036] Polishing pad: IC 1000-XY / SUBA IV20 type composite polishing pad;

[0037] Polishing fluid flow: 80ml / min;

[0038] Polishing pressure: 0.5-1psi;

[0039] Polishing temperature: 250C

[0040] Polishing rate: The polishing removal rate is calculated from the change in the weight of the wafer before and after polishing, which can be measured by an electronic balance. The polishing rate is ...

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Abstract

The invention relates to a weakly acidic copper polishing solution applicable to low downforce and belongs to the technical field of microelectronics auxiliary materials and ultra-precision machining processes. The polishing solution comprises abrasive particles, an oxidant, deionized water, an inhibitor, a complexing agent and a silica sol stabilizer; and the pH value of the polishing solution is 5-7. By adopting the weakly acidic copper polishing solution, high removal speed and high surface accuracy of copper polishing are achieved under the condition of low downforce (below 1 psi) and the surface of polished copper has less residues of abrasive particles and ionic contamination.

Description

technical field [0001] The invention belongs to the technical field of microelectronic auxiliary materials and ultra-precision processing technology, and particularly relates to a copper weak acid polishing liquid with high removal rate, less particle residue and no ion pollution. Background technique [0002] Chemical Mechanical Polishing (CMP) is currently recognized as the most effective method to achieve local and global planarization of materials, and is widely used for surface planarization in IC manufacturing processes. Copper has been used as the intermediate layer lead of IC integrated circuits, and CMP of copper is the main processing technology of micro-devices, and countries are stepping up research. The key factor affecting the global planarization of copper CMP is the polishing liquid, which determines whether the entire polishing process and polishing results are ideal. Internationally, copper CMP polishing liquids are mainly divided into two categories accor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 顾忠华潘国顺龚桦邹春莉罗桂海王鑫陈高攀
Owner SHENZHEN LEAGUER MATERIAL
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