Processing method for low-dielectric-constant dielectric film and manufacturing method for semiconductor interconnection structure
A technology of low dielectric constant and low dielectric constant layer, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as the destruction of low dielectric constant dielectric films, and achieve a simple and easy processing method, which can be reversed. destructive effect
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Embodiment 1
[0056] A diffusion barrier layer is deposited on the semiconductor device layer, and silicon dioxide is grown on the diffusion barrier layer by chemical vapor deposition, but at the same time, —CH is introduced 3, thereby forming a porous low dielectric constant dielectric film with a dielectric constant K1 of 2.59. A low dielectric constant hard mask layer, a hard mask layer, a TiN layer, and an oxide layer are sequentially deposited on the porous low dielectric constant film; the oxide layer and the oxide layer are sequentially etched using the patterned photoresist layer as a mask. TiN layer until the hard mask layer is exposed; after removing the patterned photoresist layer, etch the hard mask layer, the low dielectric constant hard mask layer and the low dielectric constant layer in sequence using the oxide layer and the TiN layer as a mask constant layer, forming connection holes in the low dielectric constant layer; performing aprotic solvent treatment on the porous low...
Embodiment 2
[0065] A porous low dielectric constant film was prepared in the same manner as in Example 1. Please refer to Table 1 for the specific measurement data of the measured dielectric constant of the porous low dielectric constant film and the contact angle of the porous low dielectric constant film.
[0066] Put the semiconductor device with the above-mentioned porous low dielectric constant film in a supercritical drying kettle, pour DMSO into the drying kettle, and then seal the drying kettle. Then, after feeding nitrogen into the drying kettle, start the heating program until the temperature in the drying kettle reaches 180 degrees Celsius and the pressure is 1 atmosphere; keep the temperature and pressure constant (30min), so that DMSO reaches a supercritical fluid state. Slowly vent the gas in the drying kettle, and when the temperature in the drying kettle naturally cools down to room temperature, you can open the drying kettle and take out the processed semiconductor device...
Embodiment 3
[0068] A porous low dielectric constant film was prepared in the same manner as in Example 1. Please refer to Table 1 for the specific measurement data of the measured dielectric constant of the porous low dielectric film and the contact angle of the porous low dielectric film.
[0069] Dimethyl ketone and lutidine form a mixed solution with a volume ratio of 1:1, using the mixed solution as an aprotic solvent, soaking the low dielectric constant dielectric film into the mixed solution at normal temperature and pressure, 10 After 10 minutes the film was removed and dried. The dielectric constant and contact angle of the low dielectric constant dielectric film were measured before and after immersion, and the specific measurement data are shown in Table 1. Concrete processing steps and measuring method are with embodiment 1.
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