Interruptible perovskite type organic halide thin-film solar cell photo-anode preparing method

A solar cell, organic halide technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of complex operation, low battery efficiency, and high equipment cost

Active Publication Date: 2015-01-14
SHIJIAZHUANG TIEDAO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Existing methods for preparing photoanode materials for perovskite thin-film solar cells include molecular beam epitaxy, chemical vapor deposition, and radio frequency magnetron sputtering. However, these methods require high equipment costs and are not conducive to large-scale promotion.
F.Javier Ramos et al. (ChemPhysChem, 2014, 15, 1148-1153.) prepared zinc oxide nanorods by chemical vapor deposition, and the perovskite thin-film solar cells prepared with

Method used

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  • Interruptible perovskite type organic halide thin-film solar cell photo-anode preparing method
  • Interruptible perovskite type organic halide thin-film solar cell photo-anode preparing method
  • Interruptible perovskite type organic halide thin-film solar cell photo-anode preparing method

Examples

Experimental program
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Example Embodiment

[0021] Example 1

[0022] (1) Preparation of dense zinc oxide layer

[0023] Zn(CH 3 COO) 2 Dissolve in ethanol, after magnetic stirring for 0.5 hours, add DEA (the molar ratio is CH 3 COOH: Zn(CH 3 COO) 2 :DEA=66:1:1), after stirring for 10 minutes, a zinc ion precursor sol is prepared.

[0024] Spin coating: drop the zinc ion precursor sol on the FTO glass, spin coating at a speed of 3500r / min for 30 seconds; sinter the spin-coated film at 200-500°C for 30 minutes; prepare a dense zinc oxide film.

[0025] (2) Preparation of multi-porous zinc oxide layer

[0026] Electrodeposition solution configuration: Zn(NO 3 ) 2 And C 6 H 12 N 4 The aqueous solution is mixed with the solution and stirred to obtain the electrochemical solution (molar ratio is Zn(NO 3 ) 2 : C 6 H 12 N 4 : H 2 O=1:1:5556).

[0027] At 25°C, a multi-porous zinc oxide film was prepared on the above-prepared dense zinc oxide layer. The deposition voltage was -1V and the deposition time was 1800s. The electrochemically de...

Example Embodiment

[0032] Example 2

[0033] (1) Preparation of dense zinc oxide layer

[0034] Zn(CH 3 COO) 2 Dissolve in ethanol, after magnetic stirring for 0.5 hours, add DEA (the molar ratio is CH 3 COOH: Zn(CH 3 COO) 2 :DEA=66:1:1), after stirring for 10 minutes, a zinc ion precursor sol is prepared.

[0035] Spin coating: drop the zinc ion precursor sol on the FTO glass, spin coating at a speed of 3500r / min for 30 seconds; sinter the spin-coated wafer at 200-500°C for 30 minutes; prepare a dense zinc oxide layer.

[0036] (2) The preparation and assembly process of solar cells

[0037] Refer to the preparation and assembly process of the solar cell in Example 1.

Example Embodiment

[0038] Example 3

[0039] (1) Preparation of zinc oxide multi-level porous layer

[0040] Electrodeposition solution configuration: Zn(NO 3 ) 2 And C 6 H 12 N 4 The aqueous solution is mixed with the solution and stirred to obtain the electrochemical solution (molar ratio is Zn(NO 3 ) 2 : C 6 H 12 N 4 : H 2 O=1:1:5556).

[0041] Prepare a multi-porous zinc oxide film on a flexible transparent conductive substrate at 25°C. The deposition voltage is -1V and the deposition time is 1800s. The electrochemically deposited laminate film is fired at 130°C for 1 hour to obtain the multi-porous zinc oxide Floor.

[0042] (2) The preparation and assembly process of solar cells

[0043] Refer to the preparation and assembly process of the solar cell in Example 1.

[0044] Attached figure 1 A schematic diagram showing the structure of a perovskite-type organic halide thin film solar cell with a transparent conductive substrate ( figure 1 The schematic diagram of the thin film referred to in 1), dens...

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Abstract

The invention discloses an interruptible perovskite type organic halide thin-film solar cell photo-anode preparing method and belongs to the field of preparation of semiconductor photoelectric materials and nano-films. According to the method, a dense zinc oxide thin film electron transfer layer is prepared on a flexible transparent conductive substrate with the rotary film coating method, a hierarchical pore zinc oxide thin film electron transfer layer is prepared on the dense zinc oxide thin film with the electrochemical deposition method, and finally a conductive substrate layer/dense semiconductor/ hierarchical pore semiconductor laminated thin film, namely an interruptible perovskite type organic halide thin-film solar cell photo-anode is obtained. According to the method, the structure and morphology of the zinc oxide hierarchical pore layer are controlled by controlling the voltage, deposition time, temperature, concentration of deposit liquid and the like during electrochemical deposition. The method has the advantages that the preparation technology is simple, cost is low, resultant temperature is low, controllability is high, and the obtained hierarchical pore zinc oxide film is uniform and stable and suitable for serving as an interruptible perovskite type thin-film solar cell photo-anode material.

Description

technical field [0001] The invention relates to the technical field of thin-film solar cells, in particular to a perturbable perovskite-type organic halide thin-film solar cell photoanode material and a preparation method thereof, and belongs to the field of semiconductor optoelectronic materials and nano-film preparation. Background technique [0002] With the gradual depletion of traditional fossil energy and the increasingly serious environmental pollution problems, high-efficiency, low energy consumption, and pollution-free thin-film solar cells have attracted the attention of various countries. Since the dye-sensitized solar cell (DSC) was invented by Michael Gratzel in 1991 Since then, scientists have introduced organic / inorganic hybrid perovskite structures into solar cells, effectively improving the efficiency of perovskite thin-film solar cells; especially based on CH 3 NH 3 I·PbX 2 (X is Cl, Br or I) and other organic / inorganic hybrid perovskite thin-film solar c...

Claims

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Application Information

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IPC IPC(8): H01L51/56H01L51/52
CPCH10K71/60H10K30/152H10K30/81Y02E10/549
Inventor 赵晋津刘正浩王鹏魏丽玉朱维礼丁思琪王喜
Owner SHIJIAZHUANG TIEDAO UNIV
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