Efficient laminated thin film solar cell and preparing method thereof

Abstract

The invention belongs to the field of efficient silicon-based thin film solar cells, and particularly relates to an efficient laminated thin film solar cell and a preparing method thereof. According to the method, a magnetron sputtering coating system is adopted, a TCO thin film is prepared on a substrate in a sputtering mode and subjected to cleaning and laser photoetching, then a PECVD system is adopted to carry out silicon-based thin film deposition on the TCO thin film, and a top cell PIN, a middle cell PIN and a bottom cell PIN are sequentially manufactured, wherein, P layers are a-SiC: H thin films, N layers are a-SiO: H thin films, the I layer of the top cell is a-Si: H, the I layer of the middle cell is a-SiGe: H, and the I layer of the bottom cell is gradient a-SiGe: H; then the silicon-based thin film is subjected to laser scribing; finally a back electrode AZO / Ag is sputtered and subjected to laser scribing to form the solar cell. The three-lamination thin film solar cell of the structure of TCO / P-a-SiC: H / I-a-Si: H / H / N-a-SiO: H / P-a-SiC: H / I-a-SiGe: H / N-a-SiO: H / P-a-SiC: H / I-uc-Si: H / N-a-SiO: H / AZO / Ag is prepared. Open-circuit voltage of the solar cell can be effectively improved.

Description

technical field [0001] This patent relates to a stacked thin film solar cell and a preparation method thereof, belonging to the field of high-efficiency thin film solar cells. Background technique [0002] Amorphous silicon (a-Si:H) solar cells are favored because of their advantages such as less raw material consumption, easy large-scale production, and flexible thin-film solar cells. However, at present, amorphous silicon thin film solar cells still face problems such as low conversion efficiency and light-induced degradation (S-W) effect. Improving the efficiency of amorphous silicon solar cells and effectively reducing light-induced degradation are the main directions for the development of silicon thin film solar cells in the future. [0003] The band gap of amorphous silicon material can be adjusted by forming alloys with elements such as germanium (Ge), carbon (C), oxygen (O) and nitrogen (N), and amorphous silicon carbon (a-SiC:H) alloy thin film material With a wid...

AI Technical Summary

Problems solved by technology

However, at present, amorphous silicon thin film solar cells still face problems such as low conversion efficiency and light-induced degradation (S-W) effect. Improving the efficiency of amorphous silicon solar cells and effectively reducing light-induced degradation are the main directions for the development of silicon thin film solar cells in the future.

[0003] The bandgap of amorphous silicon material can be tuned by alloying elements such as germanium (Ge), carbon (C), oxygen (O) and nitrogen (N) , the amorphous silicon carbon (a-SiC:H) alloy film material has a wide band gap, and the band gap of the a-SiC:H alloy can be adjusted between 1.7eV and 2.2eV by changing the C content, which is used as The P-type window layer of silicon-based thin-film solar cells can significantly increase the open-circuit voltage and short-circuit current of the battery, but the a-SiC:H alloy material has a high defect state density, which is not suitable for the intrinsic absorption layer of silicon-based thin-film solar cells

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