Method for manufacturing thin film capacitor with anodic oxidation film as dielectric layer

Abstract

The invention discloses a method for manufacturing a thin film capacitor with an anodic oxidation film as a dielectric layer. The method comprises the following steps: a substrate is prepared, and a layer of metal or metal oxide thin film is deposited on the substrate; the thin film is patterned by a photolithography and etching process to form a lower electrode and a first lower electrode lead-out wire; photoresist is applied to the lower electrode and the first lower electrode lead-out wire, and an anodic oxidation mask is formed through a photolithography process; anode oxidation is carried out on the lower electrode to form a dielectric layer; and the photoresist is removed, an electrode layer is deposited on the substrate, and the electrode layer is patterned by a photolithography and etching process to form a second lower electrode lead-out wire, an upper electrode, and an upper electrode lead-out wire. Manufacturing equipment and processes needed by the method are simple, the manufacturing cost is low, the capacitance value and voltage value are easy to adjust, and excellent electrical characteristics are achieved.

Description

technical field [0001] The invention relates to a method for manufacturing a film capacitor whose dielectric layer is an anodized film. Background technique [0002] The development trend of microwave electronic products and electronic complete machines is "light, thin, short, small", multi-functional, high assembly density and high reliability. Integrating metal transmission lines, resistors, capacitors, inductors and other components on the substrate is conducive to reducing the circuit volume, improving integration, reducing parasitic parameters, and improving circuit bandwidth and high-frequency characteristics. Among them, the integration of film capacitors on the substrate is a key technology, and the existing technologies include the following: [0003] Silicon nitride is used as the dielectric layer material of thin-film capacitors. Due to the residual stress of the sputtered silicon nitride film, the adhesion of the film layer is not good. The plasma-enhanced chemi...

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Problems solved by technology

The disadvantage of this manufacturing process is that in addition to physical vapor deposition coating equipment, large and expensive equipment such as plasma chemical vapor deposition and dry etching are required, and a complex manufacturing process for air bridges is required.

For example, it is mentioned in the published patent CN 1295341A: adopt low-pressure chemical vapor deposition (LPCVD) to obtain amorphous Ta 2 o 5 thin film, however this amorphous Ta 2 o 5 The compactness of the thin film is not good, it needs to undergo low temperature annealing and high temperature annealing in an annealing furnace with a certain gas atmosphere to make the amorphous Ta 2 o 5 Film crystallization and densification to improve leakage current characteristics and dielectric properties of film capacitors

It is not difficult to see from the patent description that this method requires complex equipment and processes, and the production process is cumbersome and costly

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