Semiconductor starting device based on spiral polycrystalline silicon field effect transistor charging and manufacturing process of semiconductor starting device
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- CHENGDU SMET TECH
- Publication Date
- 2015-02-18
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
technical field
[0001] The invention relates to an integrated circuit starting device, in particular to a semiconductor starting device and a manufacturing process based on charging of a spiral polysilicon type field effect transistor. Background technique
[0002] The switching power supply starting circuit is a commonly used starting device in integrated circuits. At present, the structure (or basic principle) of most switching power supply starting circuits is as follows: figure 1 As shown, it includes resistor R1, capacitor C1, Zener diode ZD1, auxiliary winding N1, diode D1 and control IC. The current is greater than the starting current of the control IC. After the voltage of the capacitor C1 rises to the normal operating voltage of the control IC, the control IC starts to work. When the output voltage Vout of the starting circuit is stable, the voltage generated by the auxiliary winding N1 is rectified by the diode D1 and the capacitor C1 supplies power to the contro...