(111) single silicon wafer-integrated three-axis micromechanical acceleration sensor and manufacturing method

An acceleration sensor and acceleration sensing technology, applied in multi-dimensional acceleration measurement, acceleration measurement using inertial force, microstructure device composed of deformable components, etc., can solve the problems of difficult detection, complicated manufacturing process, high cost, etc. problems, to achieve the effects of reducing production costs, good process compatibility, and simplifying the production process

Active Publication Date: 2015-04-01
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned shortcoming of prior art, the object of the present invention is to provide a kind of (111) three-axis micro-machine acceleration sensor integrated with single silicon chip and manufacturing method, be

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  • (111) single silicon wafer-integrated three-axis micromechanical acceleration sensor and manufacturing method
  • (111) single silicon wafer-integrated three-axis micromechanical acceleration sensor and manufacturing method
  • (111) single silicon wafer-integrated three-axis micromechanical acceleration sensor and manufacturing method

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Embodiment 1

[0047] see figure 1 , the present invention provides a (111) three-axis micromachined acceleration sensor integrated with a single silicon chip, the (111) three-axis micromachined acceleration sensor integrated with a single silicon chip at least includes: (111) a single silicon chip and all integrated in Three mutually independent acceleration sensing units 1 in the X-axis direction, 2 acceleration sensing units 2 in the Y-axis direction and 3 acceleration sensing units 3 in the Z-axis direction on the (111) single silicon chip; The acceleration sensing unit 1, the acceleration sensing unit 2 in the Y-axis direction, and the acceleration sensing unit 3 in the Z-axis direction are integrated on the same surface of the (111) single silicon chip; wherein, the acceleration in the X-axis direction The sensing unit 1 has the same structure as the acceleration sensing unit 2 in the Y-axis direction, and both include a first cantilever beam 4 and a first pressure-sensitive resistor 5...

Embodiment 2

[0060] see Figure 3 to Figure 4 , the present invention also provides a (111) manufacturing method of a three-axis micromachined acceleration sensor integrated on a single silicon chip, comprising the following steps:

[0061] 1) An n-type (111) single silicon wafer is provided, the single-sided polished or double-sided polished silicon wafer, and the axis offcut is 0±0.1°; the method of boron ion implantation is used on the (111) single silicon wafer Make pressure-sensitive resistors and reference resistors on the front side, and the resistance value of the resistors is 2.0kΩ~3.0kΩ (such as Figure 4 (a) shown).

[0062] 2) Depositing low-stress silicon nitride and TEOS silicon oxide sequentially on the front side of the (111) single silicon wafer as a surface passivation protection layer by using LPCVD process.

[0063] 3) Using a two-step silicon deep reactive ion etching process to make a plurality of release windows at intervals on the (111) single silicon wafer, the r...

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Abstract

The invention provides a (111) single silicon wafer-integrated three-axis micromechanical acceleration sensor and a manufacturing method. According to the three-axis acceleration sensor, a single-silicon wafer single-surface body silicon micromechanical process is adopted, and the three-axis acceleration sensor can be molded with one step on the same surface of a (111) single silicon wafer; acceleration sensor units at the directions of an X axis and a Y axis are of double-cantilever beam structures; an acceleration sensor unit at the direction of a Z axis is of a single-cantilever beam structure; and one-step release molding of the cantilever beam structures of different sizes can be realized through selectively corroding the interior of the substrate of the single silicon wafer; and squeeze-film damping and overload protection at the sensitive direction of the acceleration sensor unit at the direction of the Z axis can be adjusted through movable clearances buried at the interior of the substrate of the single silicon wafer, and therefore, problems such as residual stress, poor anti-impact strength and high production cost which are caused by multi-chip bonding of a traditional multi-axis sensor can be solved. The single silicon wafer-integrated three-axis micromechanical acceleration sensor has the advantages of small size, low cost, high processing compatibility, suitability for high-g value acceleration measurement and bright application prospect.

Description

technical field [0001] The invention belongs to the field of silicon micromechanical sensors, and relates to a (111) three-axis micromechanical acceleration sensor integrated with a single silicon chip and a manufacturing method. Background technique [0002] With the rapid development of MEMS technology and the maturity of silicon micromachining technology, accelerometers based on silicon micromachining technology have the advantages of small size, low cost, high performance and suitable for mass production. It is widely used in different fields and plays an important role, such as: automotive airbags, crash testing, consumer electronics, seismic wave detection, military inertial technology navigation, robot industry and automation control and other motion monitoring projects. Among them, explosion, impact and penetrating bomb fuzes are one of the very special applications, and the acceleration that needs to be detected can reach the level of tens of thousands of g or even ...

Claims

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Application Information

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IPC IPC(8): G01P15/18B81B3/00B81C1/00
Inventor 李昕欣王家畴邹宏硕
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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