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A Method for Reducing Refractive Index of Ceramic Oxide Optical Thin Film

A technology of ceramic oxide and optical thin film, applied in optics, optical components, sputtering coating, etc., to achieve the effect of ensuring lateral uniformity, feasible operation, and reducing refractive index

Active Publication Date: 2016-08-10
THE 3RD ACAD 8358TH RES INST OF CASC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the application of hot isostatic pressing post-processing technology in the field of optical thin films is rarely reported.

Method used

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  • A Method for Reducing Refractive Index of Ceramic Oxide Optical Thin Film
  • A Method for Reducing Refractive Index of Ceramic Oxide Optical Thin Film
  • A Method for Reducing Refractive Index of Ceramic Oxide Optical Thin Film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Preparation of HfO by Ion Beam Sputtering 2 Film Refractive Index Modification:

[0043] 1) Si substrate with ultra-smooth surface, surface roughness ~0.3nm, size Φ40×0.30mm, HfO prepared by ion beam sputtering deposition method 2 film;

[0044] 2) Ion beam sputtering deposition of HfO 2 The thin film adopts high-purity metal Hf target material, the purity is ≥99.95%, and the vacuum degree of the back is better than 1.0×10 -3 P, the ion beam voltage is 1250V, the ion beam current is 600mA, the oxygen flow rate is 25sccm, and the deposition time is 1h;

[0045] 3) Prepared HfO 2 The film is placed in a quartz petri dish, and processed in an Ar atmosphere of a hot isostatic pressing device, with a pressure of 50Mpa, a temperature of 300°C, and a processing time of 16 hours;

[0046] 4) Use an ellipsometer to measure the reflection ellipsometric parameters Ψ(λ) and Δ(λ) of the silica film, set the measurement wavelength range to 300nm-800nm, the measurement step size ...

Embodiment 2

[0049] Preparation of Ta by Ion Beam Sputtering 2 o 5 Film Refractive Index Modification:

[0050] 1) Si substrate with ultra-smooth surface, surface roughness ~0.3nm, size Φ40×0.30mm, prepared by ion beam sputtering deposition method 2 o 5 film;

[0051] 2) Ion beam sputtering deposition of Ta 2 o 5 The film adopts high-purity metal Ta target material, the purity is ≥99.95%, and the vacuum degree of the back is better than 1.0×10 -3 P, the ion beam voltage is 1250V, the ion beam current is 600mA, the oxygen flow rate is 25sccm, and the deposition time is 1h;

[0052] 3) Prepared Ta 2 o 5 The film is placed in a quartz petri dish, and processed in an Ar atmosphere of a hot isostatic pressing device, with a pressure of 50Mpa, a temperature of 300°C, and a processing time of 16 hours;

[0053] 4) Use an ellipsometer to measure the reflection ellipsometric parameters Ψ(λ) and Δ(λ) of the silica film, set the measurement wavelength range to 300nm-800nm, the measurement step...

Embodiment 3

[0056] Preparation of SiO by Ion Beam Sputtering 2 Film Refractive Index Modification:

[0057] 1) Si substrate with ultra-smooth surface, surface roughness ~0.3nm, size Φ40×0.30mm, SiO2 thin film prepared by ion beam sputtering deposition method;

[0058] 2) SiO deposited by ion beam sputtering 2 The film adopts high-purity ultraviolet fused silica target material, the purity is ≥99.995%, and the vacuum degree of the back and the bottom is better than 1.0×10 -3 P, the ion beam voltage is 1250V, the ion beam current is 600mA, the oxygen flow rate is 25sccm, and the deposition time is 1h;

[0059] 3) Prepared SiO 2 The film is placed in a quartz petri dish, and processed in an Ar atmosphere of a hot isostatic pressing device, with a pressure of 50Mpa, a temperature of 300°C, and a processing time of 16 hours;

[0060] 4) Use an ellipsometer to measure the reflection ellipsometric parameters Ψ(λ) and Δ(λ) of the silica film, set the measurement wavelength range to 400nm-800n...

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Abstract

The invention belongs to the technical field of adjustment of refractive index of an optical thin film refractive index and particularly relates to a method for reducing the refractive index of a ceramic oxide optical thin film. The adjustment of reduction on the refractive index of the optical thin film is realized by a method of hot isotropic pressure action. Post processing refractive index modification is carried on the optical thin film through hot isostatic pressing by the method, and particularly, the refractive index of the ceramic oxide optical thin film is reduced by the method. The method is novel and feasible in operation, and the refractive index of the ceramic oxide optical thin film can be effectively reduced. By the method, the refractive index of the ceramic oxide optical thin film can be conveniently and effectively reduced, and the transverse uniformity of regulation on the refractive index of the thin film is guaranteed by transversely applying isotropic pressure to the thin film and increasing the temperature of the thin film.

Description

technical field [0001] The invention belongs to the technical field of adjusting the refractive index of optical thin films, and in particular relates to a method for reducing the refractive index of ceramic oxide optical thin films. Background technique [0002] Ceramic oxide films mainly include TiO 2 , ZrO 2 、 Ta 2 o 5 , HfO 2 , Y 2 o 3 , SiO 2 etc. It has good mechanical strength, strong oxidation resistance, good wear resistance, small thermal expansion coefficient, high hardness, high temperature resistance, thermal shock resistance and chemical corrosion resistance. Therefore, it has been widely used in the research and development of various spectral modulation optical components in the field of optical thin film materials. In the deposition technology of optical thin films, there are many mature technical means, among which electron beam (E-beam), ion-assisted (Ion Assisted Deposition, IAD) and ion beam sputtering (Ion Beam Sputtering, IBS) based on physical...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B1/10C23C14/58
CPCC23C14/5806G02B1/12
Inventor 季一勤刘华松姜玉刚刘丹丹王利栓姜承慧
Owner THE 3RD ACAD 8358TH RES INST OF CASC
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