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Method for improving metal silicides

A metal silicide, metal layer technology, applied in electrical components, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems that have not been introduced, and achieve the effect of increasing the fluorine content

Active Publication Date: 2015-04-08
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The above-mentioned patents do not introduce the technical characteristics of depositing a fluorine-doped silicon oxide layer on a semiconductor structure and diffusing the fluorine in the fluorine-doped silicon oxide layer to the substrate through an annealing process

Method used

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specific Embodiment 1

[0027] The present invention relates to a kind of method for improving existing nickel silicide, which comprises the following steps:

[0028] Such as figure 1 As shown in step S1, a gate structure is formed on a silicon substrate 1 pre-prepared with a metal silicide preparation region, and the gate structure includes a gate oxide layer 2 and a gate located above the gate oxide layer 2. The electrode 3 and the gate 3 can be metal gates or polysilicon gates, which are selected according to the needs of actual devices;

[0029] Such as figure 2 As shown, in step S2, a layer of fluorine-doped silicon oxide layer 4 is deposited on the surface of the remaining silicon substrate 1, the upper surface of the gate 3 and the side surfaces of the gate structure. The thickness of the fluorine-doped silicon oxide layer 4 is preferably 20 -100 Angstroms, wherein the content of fluorine is preferably less than 5%, and then depositing a silicon nitride layer 5 on the surface of the fluori...

specific Embodiment 2

[0034] Such as Figure 1 to Figure 5 Shown, the present invention relates to a kind of method for improving existing nickel silicide, which comprises the following steps:

[0035] Such as figure 1 As shown in step S1, a gate structure is formed on a silicon substrate 1 pre-prepared with a metal silicide preparation region, and the gate structure includes a gate oxide layer 2 and a gate located above the gate oxide layer 2. The electrode 3 and the gate 3 can be metal gates or polysilicon gates, which are selected according to the needs of actual devices;

[0036] Step S2, depositing a silicon oxide layer (not shown in the figure) on the surface of the remaining silicon substrate 1, the upper surface of the gate 3 and the sides of the gate structure;

[0037] Such as figure 2 As shown, in step S3, a layer of fluorine-doped silicon oxide layer 4 is deposited on the upper surface of silicon oxide to form a silicon oxide composite layer. The thickness of the fluorine-doped sil...

specific Embodiment 3

[0042] The present invention relates to a kind of method for improving existing nickel silicide, which comprises the following steps:

[0043]Step S1, forming a plurality of gate structures on a silicon substrate pre-prepared with a metal silicide preparation region, these gate structures include a gate oxide layer and gates located above these gate oxide layers, the gates can be The metal gate can also be a polysilicon gate, which is selected according to the needs of the actual device;

[0044] Step S2, depositing a layer of fluorine-doped silicon oxide layer on the surface of the remaining silicon substrate, the upper surface of the gate and the side of the gate structure, the thickness of the fluorine-doped silicon oxide layer is preferably 20-100 angstroms, wherein the fluorine The content is preferably less than 5%, and then a silicon nitride layer is deposited on the surface of the fluorine-doped silicon oxide layer;

[0045] Step S3, performing a first heat treatment ...

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Abstract

The invention relates to the field of semiconductor device optimization, and particularly relates to a method for improving metal silicides. After a gate structure of a silicon substrate is formed, a fluorine-doped silicon glass (FSG) layer is deposited, a silicon nitride layer is then deposited, silicon nitride on a PMOS is selectively removed, and the silicon nitride layer and the FSG layer are all removed after high-temperature annealing. After a device is formed, silicon nitride is deposited as an SAB mask, silicon nitride covering positions in which metal silicide needs to be formed is selectively removed through exposing, developing and etching, silicon nitride is deposited on a metal layer and a protective layer, and secondary annealing is carried out to form a nickel silicide. Fluorine in fluorine-doped silicon nitride is diffused to substrate silicon through subsequent annealing so as to increase the fluorine content in substrate silicon and reduce the possibility of Ni piping and spiking.

Description

technical field [0001] The invention relates to the field of semiconductor device optimization, in particular to a method for improving metal silicide. Background technique [0002] In the process of integrated circuits and silicon devices, silicon oxidation is generally carried out at a high temperature of about 1000°C. Under such conditions, silicon wafers often have problems such as impurity redistribution, thermally induced defects, and warpage. Therefore, the further reduction of the size of integrated circuit devices has brought serious obstacles. In order to meet the needs of large-scale integrated circuits and reduce the influence of these factors, silicon wafers need to be oxidized under low temperature conditions. However, the conventional low temperature oxidation process, when the temperature is lower than or equal to 800°C, the oxidation rate is too slow to be applied. Therefore, the Journal of Electrochemistry has reported a plasma fluorine-doped oxidation met...

Claims

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Application Information

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IPC IPC(8): H01L21/28
CPCH01L21/2225H01L21/28
Inventor 鲍宇
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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