Device and method for monitoring dislocation of loaded wafer of flat plate type epitaxial furnace

Abstract

The invention provides a device and a method for monitoring the dislocation of a loaded wafer of a flat plate type epitaxial furnace. The device comprises a loaded wafer, a base of the epitaxial furnace, a loaded wafer groove, a mechanical hand, a laser transmitter, a laser receiver, a laser detection and control substrate and the like, wherein the laser detection and control substrate is mutually connected with a mechanical hand detection and control substrate of the epitaxial furnace and a machine table main control system. After the loading of the loaded wafer is completed, laser light is emitted to a center position of the loaded wafer of the epitaxial furnace substrate through the laser transmitter, and the laser light is reflected through the loaded wafer; the laser receiver is used for receiving the reflected laser light, and the monitoring of dislocation of the loaded wafer is carried out by judging whether the laser light is received by the laser receiver or not. According to the device and the method for monitoring the dislocation of the loaded wafer of the flat plate type epitaxial furnace, provided by the invention, the situation that a loaded wafer is subjected to dislocation can be accurately and effectively detected at the first time after the loading of the loaded wafer is completed, and the loss of an epitaxial wafer and follow-up device manufacturer can be avoided.

Description

technical field [0001] The invention relates to a manufacturing device for epitaxial wafers, in particular to a monitoring device and a monitoring method for a loaded wafer in a flat epitaxial wafer manufacturing device. Background technique [0002] In the manufacture of semiconductor chips, as a main material for making semiconductor discrete devices, silicon epitaxial wafers have an extremely important position, because silicon epitaxial wafers can not only ensure the high breakdown voltage of the PN junction, but also reduce the forward voltage of the device. Voltage drop; at the same time, silicon epitaxial wafer can also solve the isolation problem of IC, so it is also the main raw material of IC device. In actual industrial production, chemical vapor deposition (chemical vapor deposition, CVD) technology is widely used in the manufacture of silicon epitaxial wafers. The flat-plate epitaxial furnace in the CVD epitaxy furnace is currently the main equipment in the man...

AI Technical Summary

Problems solved by technology

As we all know, for semiconductor devices, the epitaxial layer needs to have a perfect crystal structure and uniform electrical parameters such as epitaxial thickness and resistivity. The appearance of out of pocket makes the temperature and air flow on the silicon wafer change during the epitaxy process, which directly leads to the deterioration of the epitaxial wafer thickness and resistivity uniformity, and even produces lattice defects.

[0004] The current popular flat-panel epitaxy equipment cannot detect the out of pocket of the silicon wafer, and after the manipulator completes the loading of the silicon wafer, it is impossible to manually identify the abnormality

Once out of pocket occurs, the epitaxial wafer parameters will be out of control

In the actual production of epitaxial wafers, since the test method of the main parameters such as the resistivity test is a destructive test, the sampling test of producing 25 to 100 pieces of testing is used in the continuous production process, so the test of epitaxial wafer parameters is often The electrical parameter problems caused by the out of pocket cannot be detected in time, so that it is impossible to further detect that the out of pocket abnormality has occurred in the equipment; The abnormal electrical parameters were found in the process, and it was found that it was caused by the out of pocket abnormality in the epitaxial wafer manufacturing process; and from the epitaxial wafer shipment to the subsequent device production test, the manufacture of simple devices such as Schottky diode chips is at least To experience a production cycle time of more than 25 days, a flat-plate epitaxial furnace such as LPE3061 can produce 6” epitaxial wafers with a production capacity of 5,000 pieces per month. The losses caused by the epitaxial wafers and downstream device manufacturers can be imagined.

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