Piezoelectric ceramic material in bismuth laminar composite structure and preparation method of piezoelectric ceramic material

A technology of piezoelectric ceramics and composite structures, applied in the field of materials, can solve the problems of difficult control of sample uniformity and stability, difficulty in preparing ceramic bodies with uniform structure, and difficulty in regulating comprehensive electrical properties, so as to facilitate large-scale industrial production and easy compounding System components, the effect of high crystallinity

Inactive Publication Date: 2015-04-22
INST OF ACOUSTICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Piezoelectric ceramics with bismuth layer structure is an important class of piezoelectric ceramics with ultra-high Curie temperature (550°C-950°C), but its piezoelectric performance is poor, and the coercive electric field is high, the resistivity is low, and it is difficult to prepare the structure. Problems such as uniform ceramic body also make it difficult to be polarized
In addition, similar to conventional ceramics, this type of ceramics is usually prepared by solid-state reaction method, the related process is cumbersome, the uniform stability of the sample is difficult to control, and the comprehensive electrical properties are difficult to control

Method used

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Embodiment 1

[0027] Embodiment 1 of the present invention provides a piezoelectric ceramic material with a bismuth layered composite structure, whose general chemical formula is: [Ca 1-x Me x Bi 2 Nb 2-2y Me' 2y o 9 ] 1-z -[Bi 3-a Me a (TiNb) 1-b Me' 2b o 9 ] z ;

[0028] Among them, Me and Me' are doping elements suitable for different lattice positions, Me is one or more of Li, Mn, Ce, and Me' is one or more of Ta and W; x, y , z, a, b are mole fractions respectively, 0≤x≤0.05, 0≤y≤0.05, 0≤a≤0.05, 0≤b≤0.05, 0.2≤z≤0.8.

[0029] The piezoelectric ceramic material with bismuth layered composite structure provided by the embodiment of the present invention has a very high Curie temperature, excellent piezoelectric performance and adjustable comprehensive electrical performance, and can be used in various high-temperature piezoelectric devices.

Embodiment 2

[0031] This embodiment provides the preparation method of the bismuth layered structure piezoelectric ceramic material in the above-mentioned embodiment 1, such as figure 1 shown, including:

[0032] Step 201, calcium carbonate, titanium oxide, bismuth oxide, niobium pentoxide, lithium carbonate, manganese carbonate, and the oxide or salt of the doping element Me and / or Me', according to the stoichiometric ratio Ca 1-x Me x Bi 2 Nb 2-2y Me' 2y o 9 (referred to as CBN) and Bi 3-a Me a (TiNb) 1-b Me'2b o 9 (abbreviated as BTN), carry out weighing batching respectively, obtain the first kind of raw powder that is used to prepare CBN and the second kind of raw powder that is used to prepare BTN;

[0033] Among them, Me and Me' are doping elements suitable for different lattice positions, Me is one or more of Li, Mn, Ce, and Me' is one or more of Ta and W; x, y , z, a, b are mole fractions respectively, 0≤x≤0.05, 0≤y≤0.05, 0≤a≤0.05, 0≤b≤0.05, 0.2≤z≤0.8.

[0034] Step 202...

Embodiment 3

[0048] Using calcium carbonate, bismuth oxide, titanium oxide, niobium pentoxide, lithium carbonate and manganese carbonate as raw materials, according to the chemical formula Ca 0.95 Li 0.025 mn 0.025 Bi 2 Nb 2 o 9 and Bi 2.95 Li 0.02 mn 0.03 TiNbO 9 The ingredients were prepared separately, and the prepared CBN doped with Li and Mn and the BTN powder doped with Li and Mn were put into different ball milling tanks, and ball milled with absolute ethanol as the medium for 10 hours, then dried and the powders Put them into crucibles respectively, and calcined at 800°C for 3 hours to obtain powders of CBN and BTN respectively; 0.7 BTN 0.3 Mix the ratio into an agate mortar, add polyvinyl alcohol solution and grind for 20 minutes, pass through a 200-mesh sieve and age for 10 hours, and press it under a pressure of 150MPa to form a disc with a diameter of 1.2cm and a thickness of about 1.2mm. After debinding the green body, it was sintered at 1020°C for 3 hours to obtain ...

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Abstract

The invention discloses a piezoelectric ceramic material in a bismuth laminar composite structure and a preparation method of the piezoelectric ceramic material. The chemical formula of the material is [Ca(1-x)MexBi2Nb(2-2y)Me'2yO9]1-z-[Bi3-aMea(TiNb)1-bMe'2bO9]z, wherein Me and Me' are respectively doping elements suitable for different lattice positions; M is one or more of Li, Mn and Ce; Me' is one or more of Ta and W; x, y, z, a and b are respectively molar fractions: x is greater than or equal to 0 but less than or equal to 0.05, y is greater than or equal to 0 but less than or equal to 0.05, b is greater than or equal to 0 but less than or equal to 0.05 and z is greater than or equal to 0.2 but less than or equal to 0.8. The piezoelectric ceramic material has high Curie temperature, excellent piezoelectric property and adjustable comprehensive electric property and can be used for various high-temperature piezoelectric apparatuses.

Description

technical field [0001] The invention relates to the field of material technology, in particular to a piezoelectric ceramic material with a bismuth layered composite structure and a preparation method thereof. Background technique [0002] Piezoelectric ceramics are functional ceramic materials that can convert electrical energy and mechanical energy into each other. The material will be strained under the action of an external electric field, and the positive and negative charge centers inside the material will be relatively displaced under the action of a mechanical force, thereby generating opposite charges at the two poles of the material. Piezoelectric ceramics are widely used in filters, transducers, sensors and other fields. Piezoelectric ceramics are generally ferroelectric, and the piezoelectricity will disappear near the Curie temperature. In recent years, the requirements for the performance of various piezoelectric devices used in the aerospace and automotive in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/495C04B35/622
Inventor 郭栋蔡锴邓平晔张翠红江凤
Owner INST OF ACOUSTICS CHINESE ACAD OF SCI
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