Unlock instant, AI-driven research and patent intelligence for your innovation.

Preparation die and preparation method for blocky raw material for terbium-gallium garnet crystal growth

A technology for terbium gallium garnet and crystal growth, which is applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of long production time, poor crystal quality, secondary pollution, etc., so as to improve the crystal growth efficiency and reduce the Production cost, the effect of avoiding equipment failure

Active Publication Date: 2015-04-29
CHINA ELECTRONICS TECH GRP NO 26 RES INST
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] When growing terbium gallium garnet crystals by the pulling method (CZ), there is a component Ga 2 o 3 The volatilization of the melt causes the melt to have a strong liquid flow effect, causing the growing crystal to easily produce spiral morphology and cracking problems, which brings great difficulties to the growth of high-quality, large-size crystals
The grown crystal is easy to deviate from the stoichiometric ratio, the quality of the crystal is poor, and defects such as bubbles and wrapping are easy to appear, which directly affect the relevant performance indicators of the crystal
[0004] In the traditional terbium gallium garnet crystal growth, the mixed powder of gallium oxide and terbium oxide is directly used for growth. It will cause the powder to fly, cause the gas inlet and outlet to be blocked, and cause equipment failure and danger
At the same time, when powder is used for growth, it needs multiple feeding and sintering to complete single crystal growth. This process takes a long time to produce and consumes a lot of energy, so the cost is high and it is easy to cause secondary pollution.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation die and preparation method for blocky raw material for terbium-gallium garnet crystal growth
  • Preparation die and preparation method for blocky raw material for terbium-gallium garnet crystal growth
  • Preparation die and preparation method for blocky raw material for terbium-gallium garnet crystal growth

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0031] The present invention is used for the preparation method of bulk raw materials for terbium gallium garnet crystal growth. In this preparation method, the aforementioned block raw materials for terbium gallium garnet crystal growth are used to prepare molds. The specific preparation steps are as follows:

[0032] 1) The high-purity raw material Tb with a purity greater than 99.99% 4 o 7 and Ga 2 o 3 Batching is carried out according to the molar ratio of 3:10~10.8, and then the two are fully mixed on the mixer, usually the time is about 30 hours, the mixed raw materials are put into the cylindrical barrel for preparing the mold, and then the cover is covered, and passed through Bolts and nuts fix and compress the installation part, cover plate and two hard sealing rings, so that the raw materials in the cylindrical barrel are completely sealed;

[0033] 2) Put the sealed preparation mold with mixed raw materials in the isostatic press, which transmits the pressure thr...

Embodiment 1

[0039] The high-purity raw material (greater than 99.99%) Tb 4 o 7 and Ga 2 o 3 Tb 4 o 7 : Ga 2 o 3=3: (10~10.3) Do the batching, fully mix on the mixer for 30 hours, put the mixed raw materials into the above extrusion mold, press and seal; prepare the sealed mold with the mixed raw materials Place it in an isostatic press (the isostatic press transmits pressure through a liquid medium), adjust the pressure at about 200 MPa, pressurize the mold with the mixed raw materials through the liquid medium, and pressurize for 30 minutes. After reaching normal pressure, demould to obtain a cylindrical block material with a diameter of 78 mm and a height of 90 mm, which is put into an iridium crucible with a diameter of 80 mm and a height of 60 mm for growth.

Embodiment 2

[0041] The high-purity raw material (greater than 99.99%) Tb 4 o 7 and Ga 2 o 3 Tb 4 o 7 : Ga 2 o 3 =3: (10.3~10.6) Do the batching, fully mix on the mixer for 30 hours, put the mixed raw materials into the above extrusion mold, press and seal; prepare the sealed mold with the mixed raw materials Place it in an isostatic press (the isostatic press transmits pressure through a liquid medium), adjust the pressure at about 200 MPa, pressurize the mold with the mixed raw materials through the liquid medium, and pressurize for 50 minutes. After reaching normal pressure, demould to obtain a cylindrical block material with a diameter of 98 mm and a height of 125 mm, which was placed in an iridium crucible with a diameter of 100 mm and a height of 80 mm to grow large-sized terbium gallium garnet crystals.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation die and a preparation method for a blocky raw material for terbium-gallium garnet crystal growth. The preparation die comprises a cylindrical barrel, wherein the open end of the cylindrical barrel is overturned outwards to form an installation part and is closed by a cover plate which is tightly attached to the installation part, and the center of the cover plate is downwards concaved to form a concave part; two hard sealing rings which are oppositely positioned are respectively arranged on the lower surface of the installation part of the cylindrical barrel and the upper surface of the cover plate, and the installation part, the cover plate and the two hard sealing rings are connected by a plurality of bolts in uniform-angle distribution and are locked by nuts, so that sealed space is formed by the cylindrical barrel and the cover plate. According to the preparation die and the preparation method, disclosed by the invention, the crystal growth efficiency can be increased, the raw material can be subjected to one-step forming, and no secondary pollution is generated; isostatic pressure is adopted for pressing the raw material, thus the density of a material block is ensured, and the quality of terbium-gallium garnet crystal at the later stage is increased.

Description

technical field [0001] The invention relates to the improvement of crystal preparation technology, in particular to a block raw material preparation mold for terbium gallium garnet crystal growth, and also relates to a preparation method based on the mold, which belongs to the technical field of crystal preparation. Background technique [0002] With the development of optical communication technology in the direction of high speed and large capacity, the laser light source is required to have the characteristics of high power, wide band, and high reliability. Therefore, the stability and damage resistance of the light source have become a research hotspot. Terbium gallium garnet single crystal has a large magneto-optical constant, low light loss, high thermal conductivity and high laser damage threshold. It is the best magneto-optic material for making Faraday rotators and isolators. It is widely used in YAG, doped Ti sapphire and other multi-stage amplification, ring cav...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B30B15/02B30B12/00C30B29/28C30B15/00
Inventor 龙勇李和新于明晓石自彬王佳丁雨憧徐扬
Owner CHINA ELECTRONICS TECH GRP NO 26 RES INST