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Novel thin film deposition aluminum precursor and preparation method thereof

A thin film deposition and precursor technology, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, electrical solid-state devices, etc., can solve unfavorable storage, transportation and subsequent use, poor thermal stability of precursors, and limit the advantages of ALD and other problems, to achieve the effect of reduced volatility, improved stability, and simple and clean synthesis process

Inactive Publication Date: 2015-04-29
JIANGNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] (1) It is easy to decompose at room temperature, its properties are extremely unstable, and it has high requirements for storage equipment, and it can be decomposed to generate hydrogen and metal aluminum during storage. Metal aluminum in turn catalyzes the decomposition reaction, and there is a danger of explosion, which is not conducive to storage Transportation and subsequent use
[0006] (2) In the process of depositing thin films by ALD, the thermal decomposition reaction occurs due to the poor thermal stability of the precursor, accompanied by CVD, which seriously limits the advantages of ALD

Method used

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  • Novel thin film deposition aluminum precursor and preparation method thereof
  • Novel thin film deposition aluminum precursor and preparation method thereof
  • Novel thin film deposition aluminum precursor and preparation method thereof

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preparation example Construction

[0041] The preparation of the precursor compound of structural formula (I) comprises the following steps: (1) the second reactant comprising alane is placed in the reaction vessel, the solvent is added and stirred evenly, and the first reactant comprising aminopyridine or its derivative is placed in Add it into a reaction vessel under low temperature conditions, stir at room temperature or heat and stir to react overnight; (2) filter the mixture in step (1), concentrate under low pressure to obtain a small amount of solid-liquid mixture, add a solvent, and stand overnight to obtain The color block crystal is the precursor (I).

[0042] Wherein, the temperature of the cryogenic conditions and / or cryogenic storage is -78°C to 0°C, using any cooling means selected from liquid nitrogen, dry ice, liquid ammonia, cryogenic circulating pumps and combinations thereof; the stirring at room temperature or The time of heating and stirring is 1 to 10 hours; the temperature of stirring at ...

Embodiment 1

[0046] Put 10.0mmol of trimethylamine alane in the reaction vessel, add n-hexane and stir evenly, then slowly add 10.0mmol of 2-n-butylaminopyridine dissolved in toluene into the system at a low temperature of -78°C, during the dropwise addition process The medium system becomes turquoise translucent with bubbles coming out. After stirring at room temperature for 1 hour, heat to 25°C and reflux overnight; filter the obtained mixture, and concentrate at a temperature of 25°C under a low pressure of 0.05 MPa to obtain a very small amount of solid-liquid mixture. Leave it overnight to obtain a colorless block crystal, which is the compound [Al 2 h 2 {N(2-C 5 h 4 N)n-Bu} 2 ], productive rate 87%, coded as 1#.

Embodiment 2

[0048] Put 15.0mmol of trimethylamine alane in the reaction vessel, add n-hexane and stir evenly, then slowly add 10.0mmol of 2-n-butylaminopyridine dissolved in toluene into the system at a low temperature of -56°C, during the dropwise addition process The medium system becomes turquoise translucent with bubbles coming out. After stirring at room temperature for 3 hours, heat to 75°C and reflux overnight; filter the obtained mixture, and concentrate at a temperature of 45°C under a low pressure of 0.1MPa to obtain a small amount of solid-liquid mixture. Leave it overnight to obtain a colorless block crystal, which is the compound [Al 2 h 2 {N(2-C 5 h 4 N)n-Bu} 2 ], productive rate 88%, coded as 2#.

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Abstract

The invention provides a novel thin film deposition aluminum precursor. The novel thin film deposition aluminum precursor has a molecular structure expressed by a structural formula (I) as shown in the specification, wherein R1, R2, R3, R4 and R5 represent hydrogen atom, C1-C6 alkyls, C2-C5 alkenyls, C3-C10 naphthenic bases, C6-C10 aryls or -Si(R0)3, and halogen substituent groups of the groups, wherein R0 is one of C1-C6 alkyls or the halogen substituent groups thereof; and R1, R2, R3, R4 and R5 are the same or different. According to the novel thin film deposition aluminum precursor, the thin film deposition precursor good in thermal stability and not easy to decompose is developed, and is convenient to store and transport and good in high-temperature volatility; aluminum-containing thin films such as an aluminum-containing metal thin film, an aluminum-containing oxide thin film, an aluminum-containing nitride thin film and an aluminum-containing alloy thin film can be prepared by use of a CVD / ALD process, and the film-forming property is excellent.

Description

technical field [0001] The invention relates to a novel thin film deposition aluminum precursor and its preparation method and application, especially suitable for atomic layer deposition technology, and relates to the fields of semiconductor and nanotechnology. Specifically, it relates to an aluminum precursor material for film deposition that is stable in nature, difficult to decompose, excellent in high-temperature volatility, and convenient for storage and transportation. Background technique [0002] With the rapid development of semiconductor technology, the manufacturing process and technology of devices have also undergone changes. More and more thin films are used, and the corresponding thin film manufacturing technology is also continuously improved. Compared with traditional technologies, chemical vapor deposition (CVD) There are many advantages, and atomic layer deposition (ALD) technology has more advantages in some fields. [0003] In CVD / ALD process technolog...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07F5/06C23C16/12H01L51/40
CPCC23C16/12C07F5/069H10K71/10H10K10/00H10K10/80
Inventor 丁玉强杨淑艳苗红艳杜立永
Owner JIANGNAN UNIV