Organic electroluminescent device and manufacturing method thereof
An electroluminescence device and luminescence technology, applied in organic light-emitting devices, organic light-emitting device structures, organic semiconductor devices, etc., can solve the problems of low cathode luminescence brightness, low cathode, and inconsistent luminance brightness of the light-emitting surface, etc.
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[0051] Such as image 3 As shown, a method for preparing an organic electroluminescent device in one embodiment includes the following steps:
[0052] Step S310: providing an anode substrate. Wherein, the anode substrate is transparent conductive glass. The transparent conductive glass may be indium tin oxide conductive glass (ITO), aluminum zinc oxide conductive glass (AZO) or indium zinc oxide conductive glass (IZO); preferably indium tin oxide glass (ITO); and indium tin oxide The sheet resistance of the conductive glass is 5Ω / □~100Ω / □.
[0053] Step S320: forming an organic light-emitting functional layer on the anode substrate.
[0054] Among them, the steps of forming the organic light-emitting functional layer on the anode substrate are: preparing a hole transport layer by vacuum evaporation on the anode substrate, preparing a light-emitting layer by vacuum thermal resistance evaporation on the hole transport layer, and using vacuum thermal evaporation on the light-e...
Embodiment 1
[0071] The structure of the organic electroluminescent device of the present embodiment is: ITO / NPB / NPB:Ir(MDQ) 2 (acac) / Bphen / LiF / ZnO / CuO / ITO.
[0072] The preparation of the organic electroluminescence device of this embodiment is as follows:
[0073] (1) Provide an ITO anode substrate and clean it, wherein the square resistance of the ITO anode substrate is 5Ω / □, and the ITO anode substrate is expressed as: ITO.
[0074] (2) Form an organic light-emitting functional layer on the anode substrate: in a vacuum of 1×10 -5 In the vacuum coating system of Pa, the hole transport layer is prepared by vacuum evaporation on the anode substrate, the thickness of the hole transport layer is 20nm, and the material is N,N'-diphenyl-N,N'-bis(1-naphthalene base)-1,1'-biphenyl-4,4'-diamine (NPB), the evaporation rate is 0.1nm / s, and the hole transport layer is expressed as: NPB;
[0075] In a vacuum of 1×10 -5 In the vacuum coating system of Pa, the light-emitting layer is prepared on t...
Embodiment 2
[0087] The structure of the organic electroluminescence device of the present embodiment is: ITO / MeO-TPD / Alq 3 :DCJTB / TPBi / CsF / SnO 2 / NiO / AZO.
[0088] The preparation of the organic electroluminescence device of this embodiment is as follows:
[0089] (1) Provide an ITO anode substrate and clean it. The sheet resistance of the ITO anode substrate is 100Ω / □, and the ITO anode substrate is expressed as: ITO.
[0090] (2) Form an organic light-emitting functional layer on the anode substrate: in a vacuum of 1×10 -3 In the vacuum coating system of Pa, the hole transport layer is prepared by vacuum evaporation on the anode substrate. The thickness of the hole transport layer is 60nm, and the material is (N,N,N',N'-tetramethoxyphenyl)- For p-diaminobiphenyl (MeO-TPD), the evaporation rate is 1nm / s, and the hole transport layer is expressed as: MeO-TPD;
[0091] In a vacuum of 1×10 -3 In the vacuum coating system of Pa, the light-emitting layer was prepared on the hole transpor...
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