Curable resin composition and semiconductor device using same

A technology of curable resin and composition, which is applied in semiconductor devices, semiconductor/solid-state device parts, electric solid-state devices, etc., and can solve problems such as corrosion resistance without any record

Inactive Publication Date: 2015-04-29
DAICEL CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for hydrogen sulfide (H 2 S) corrosion resistance, but there is no description of corrosion resistance against other corrosive gases

Method used

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  • Curable resin composition and semiconductor device using same
  • Curable resin composition and semiconductor device using same
  • Curable resin composition and semiconductor device using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0172] Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited by these examples.

[0173] reaction products and products 1 H-NMR analysis was performed using JEOL ECA500 (500 MHz). In addition, the number average molecular weight and weight average molecular weight of the reaction product and product were measured using Alliance HPLC System 2695 (manufactured by Waters), Refractive Index Detector 2414 (manufactured by Waters), column: Tskgel GMH HR -M×2 (manufactured by Tosoh Co., Ltd.), guard column: Tskgel guardcolumn H HR L (manufactured by Tosoh Corporation), column thermostat: COLUMN HEATER U-620 (manufactured by Sugai), solvent: THF, measurement conditions: 40°C.

[0174][Polyorganosiloxane (A)]

[0175] As the polyorganosiloxane (A), the following were used.

[0176] GD-1130A: manufactured by Changxing Chemical Industry Co., Ltd., vinyl content 4.32% by weight, phenyl content 44.18% by weight, ...

Synthetic example 1

[0188] 15.86 g of phenyltriethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd.) and 6.16 g of methyl isobutyl ketone (MIBK) were charged in a reaction container, and these mixtures were cooled to 10°C. 4.32 g of water and 0.16 g of 5N hydrochloric acid (2.4 mmol as hydrogen chloride) were added dropwise to the above mixture over 1 hour. After the dropwise addition, the mixture of these was kept at 10° C. for 1 hour. Then, 26.67 g of MIBK was added to dilute the reaction solvent.

[0189] Next, the temperature of the reaction container was raised to 70° C., 0.16 g (25 mmoles as hydrogen chloride) of 5N hydrochloric acid was added at 70° C., and polycondensation reaction was performed under nitrogen for 4 hours.

[0190] Next, 11.18 g of divinyltetramethyldisiloxane and 3.25 g of hexamethyldisiloxane were added to the reaction solution, and a silylation reaction was performed at 70° C. for 4 hours. Then, the reaction solution was cooled, washed with water until the lowe...

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Abstract

　Provided are: a curable resin composition provided with transparency, heat resistance, and flexibility, as well as with re-flow resistance, and also barrier properties with respect to hydrogen sulfide (H2S) gas and barrier properties with respect to sulfur oxide (SOX) gas, and that is useful in sealing applications for semiconductor elements (particularly optical semiconductor elements); a cured product using the same; a sealing material; and a semiconductor device. A curable resin composition, and a cured product, sealing material, and semiconductor device using the same, the curable resin composition including a polyorganosiloxane (A), an isocyanurate compound (B), and a zinc compound (E), the polyorganosiloxane (A) being a polyorganosiloxane having an aryl group, the curable resin composition potentially further including a silsesquioxane (D), and the content of the zinc compound (E) being less than 0.01 part by weight to 0.1 part by weight with respect to the total amount (100 parts by weight) of the polyorganosiloxane (A) and the silsesquioxane (D).

Description

technical field [0001] The present invention relates to a curable resin composition, a cured product obtained using the curable resin composition, a sealing material, and a semiconductor device obtained using the sealing material. This application claims the priority of Japanese Patent Application No. 2013-161865 for which it applied in Japan on August 2, 2013, and uses the content here. Background technique [0002] In semiconductor devices requiring high heat resistance and high withstand voltage, heat resistance of about 150° C. or higher is generally required for materials covering semiconductor elements. In particular, materials (sealing materials) covering optical materials such as optical semiconductor elements are required to be excellent in physical properties such as transparency and flexibility in addition to heat resistance. Conventionally, for example, epoxy-based resin materials and silicone-based resin materials are used as sealing materials in backlight unit...

Claims

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Application Information

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IPC IPC(8): C08L83/04C08K5/098C08K5/3477C08L83/05C08L83/07C08L83/14H01L23/29H01L23/31
CPCC08K5/098C08G77/045C08G77/12C08G77/20C08K5/34924C08L83/00C08L83/04H01L33/56H01L2224/48091H01L2224/48247H01L2924/00014
Inventor 竹中洋登板谷亮秃惠明
Owner DAICEL CHEM IND LTD
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