Simple thermal expansion method for preparing thin graphene

Abstract

The invention discloses a simple thermal expansion method for preparing thin graphene. The method comprises the following step: scattering graphite oxide powder into a furnace body of 250-400 DEG C to suddenly raise the temperature of the graphite oxide powder, so as to expand graphite oxide to obtain the thin graphene powder. The thermal expansion process of graphite oxide is directly completed under a simple condition without additional conditions mentioned in known reports such as graphite oxide pre-treatment, expansion in a hydrogen environment, expansion in a vacuum environment and the like. The number of laminates of graphene is less than 10, and graphene has no obvious diffraction peaks in an x-ray diffraction spectrum and belongs to short-range order and long-range disorder. The production cost is lowered while the production efficiency is improved, and the method is quite suitable for large-scaled production of graphene.

Description

technical field [0001] The invention relates to a simple thermal expansion preparation process of thin-layer graphene, in particular to a simple thermal expansion method for preparing thin-layer graphene; it belongs to the field of inorganic new energy materials. Background technique [0002] Graphene is composed of sp with hexagonal structure 2 A two-dimensional single-layer film composed of hybrid carbon atoms, there are two kinds of bonds in the graphene sheet: σ c-c bond and π bond. σ c-c The bonds exist on the two-dimensional plane of graphene, and because of its strongest bond energy, it has a good rigid structure. The π bond exists outside the two-dimensional plane of graphene, and is formed by the superposition of p electron orbitals perpendicular to the plane. The presence of such delocalized large π-bonds is beneficial to its electronic conductivity and provides a weaker force between graphene sheets. From a chemical point of view, structure determines propert...

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