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Ester-group-containing composition for forming silicon-containing resist underlayer film

一种抗蚀剂下层、组合物的技术，应用在形成下层膜的组合物领域，能够解决反射的影响大问题等问题

Active Publication Date: 2015-06-24
NISSAN CHEM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, in recent years, with the high integration of semiconductor devices, there is a tendency to shorten the wavelength of the active light used from KrF excimer laser (248nm) to ArF excimer laser (193nm)
Along with this, the influence of the reflection of active light from the semiconductor substrate becomes a big problem

Method used

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  • Ester-group-containing composition for forming silicon-containing resist underlayer film
  • Ester-group-containing composition for forming silicon-containing resist underlayer film
  • Ester-group-containing composition for forming silicon-containing resist underlayer film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0217] (Synthesis of compound 1)

[0218]

[0219]Add 15.00 g of 5-norbornene-2-methyl carboxylate, 3.76 g of Karstedt's catalyst (platinum (0)-1,3-divinyl- 2% by mass xylene solution of 1,1,3,3-tetramethyldisiloxane complex), 112 g of toluene, and 17.81 g of triethoxysilane were added dropwise over 10 minutes. After stirring at room temperature for 5 hours, the reaction liquid was concentrated to dryness, and the obtained crude product was purified by vacuum distillation to obtain Compound 1.

[0220] DMSO-d 6 middle 1 H-NMR (500MHz): 0.62~0.79ppm(m, 1H), 1.12~1.79ppm(m, 15H), 2.20~2.50ppm(m, 3H), 3.57ppm(q, 3H), 3.70~3.77ppm( m, 6H)

[0221] (Synthesis of Compound 2)

[0222]

[0223] Add 15.00 g of 3,3-dimethyl-4-pentenoic acid methyl ester, 1.91 g of Karstedt's catalyst (platinum (0)-1,3- 2% by mass xylene solution of divinyl-1,1,3,3-tetramethyldisiloxane complex), 112 g of toluene, and 19.06 g of triethoxysilane were added dropwise over 10 minutes. After stir...

Synthetic example 1

[0242] 15.40g (75mol% in all silanes) of tetraethoxysilane, 1.23g (7mol% in all silanes) of methyltriethoxysilane, 1.37g (7mol% in all silanes) phenyltrimethoxysilane, 1.72g (6mol% in all silanes) of methylsulfonylmethylphenyltrimethoxysilane, 1.62g (5mol% in all silanes) of (5-(tri Ethoxysilyl) norbornene-2,3-dicarboxylic anhydride, 32.00g of acetone were added to a 100ml flask, while the mixed solution was stirred with a magnetic stirrer, 6.66g of 0.01mol / l hydrochloric acid was added Added dropwise in the mixed solution. After the addition, the flask was moved to an oil bath adjusted to 85°C, and reacted for 240 minutes under heating and reflux. Then, the reaction solution was cooled to room temperature, and propylene glycol monomethyl ether ethyl was added in the reaction solution Ethyl acid ester 21g, ethanol, water, hydrochloric acid decompression distillation and concentration as reaction by-product, obtain the propylene glycol monomethyl ether acetate solution of hydro...

Synthetic example 2

[0244] 15.48g (75mol% in all silanes) of tetraethoxysilane, 1.24g (7mol% in total silanes) of methyltriethoxysilane, 1.37g (7mol% in total silanes) phenyltrimethoxysilane, 1.73g (6mol% in all silanes) of methylsulfonylmethylphenyltrimethoxysilane, 1.51g (5mol% in total silanes) of 3-(triethyl Oxysilyl) propyl succinic anhydride and 31.98g of acetone were added to a 100ml flask, and while the mixed solution was stirred with a magnetic stirrer, 6.69g of 0.01mol / l hydrochloric acid was added dropwise to the mixed solution. After the addition, the flask was moved to an oil bath adjusted to 85° C., and the mixture was reacted under reflux under heating for 240 minutes. Then, the reaction solution was cooled to room temperature, 21 g of propylene glycol monomethyl ether acetate was added to the reaction solution, and ethanol, water, and hydrochloric acid as reaction by-products were distilled off under reduced pressure and concentrated to obtain a hydrolysis condensate (polymer). P...

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Abstract

[Problem] To provide a composition for forming a resist underlayer film used in lithography, the composition forming a resist underlayer film capable of being used as a hard mask. [Solution] A composition for forming a resist underlayer used in lithography containing, as a silane, a hydrolyzable silane, a hydrolyzate of said silane, or a hydrolysis condensate of said silane. The hydrolyzable silane contains a silane of formula (1) or a combination of formula (1) and formula (2). The silane of formula (1) or the combination of formula (1) and formula (2) constitutes less than 50 mol% on the basis of the total silane content. In formula (1), R1 is an organic group containing formula (1-1), formula (1-2), formula (1-3), formula (1-4), or formula (1-5); a indicates an integer of 1, b indicates an integer of 0 or 1; a+b indicates an integer of 1 or 2. In formula (2), R4 is an organic group containing formula (2-1), formula (2-2), or formula (2-3); a 1 indicates an integer of 1; b 1 indicates an integer of 0 or 1, and a 1+b 1 indicates an integer of 1 or 2.

Description

technical field [0001] The present invention relates to a composition for forming an underlayer film between a substrate used in the manufacture of a semiconductor device and a resist (for example, photoresist, electron beam resist). Specifically, it relates to a composition for forming a resist underlayer film for lithography used for forming an underlayer film used for the underlayer of a photoresist in a photolithography process for manufacturing a semiconductor device. Moreover, it is related with the formation method of the resist pattern using this composition for underlayer film formation. Background technique [0002] Currently, in the manufacture of semiconductor devices, microfabrication is performed by photolithography using a photoresist. The microfabrication is a processing method in which a photoresist thin film is formed on a semiconductor substrate such as a silicon wafer, and a photoresist film is irradiated with active light rays such as ultraviolet rays t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/11G03F7/40H01L21/027
CPCH01L21/02126H01L21/02282H01L21/0332G03F7/0752G03F7/091G03F7/094C09D183/08C08G77/14C08G77/26C08G77/28C08G77/80C09D183/06G03F7/0757G03F7/30G03F7/322G03F7/40G03F7/36G03F7/325
Inventor 菅野裕太中岛诚武田谕若山浩之
Owner NISSAN CHEM CORP
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