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Method for preparing boron nitride nano-fibres by virtue of arc discharge

An arc discharge, nanofiber technology, applied in chemical instruments and methods, nanotechnology for materials and surface science, nitrogen compounds, etc., can solve the difficult removal of metal impurities, expensive electrode manufacturing, and low yield of boron nitride nanofibers And other issues

Inactive Publication Date: 2015-07-01
YANCHENG INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the current arc discharge method generally uses conductive compounds of boron, such as hafnium boride, zirconium boride, etc., as the anode discharge, and nitrogen as the working gas to obtain boron nitride nanofibers or nanoparticles in the discharge product. The disadvantages are that the electrode is expensive to manufacture, the yield of boron nitride nanofibers obtained is small, the reaction control is difficult, and the metal impurities mixed in it are difficult to remove, etc.

Method used

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Embodiment 1

[0030] A method for preparing boron nitride nanofibers by arc discharge, comprising the following steps:

[0031] (1) An arc discharge chamber 2 is provided, and a mixed electrode made of graphite and boron nitride crystal is used as an anode 4. The specific preparation method of the anode 4 is to process a cylindrical graphite rod 6 and a cylindrical hexagonal boron nitride crystal with a small lathe Rod 8, the length of the cylindrical graphite rod 6 after processing is 40mm, and the diameter is 6mm, and the length of the cylindrical hexagonal boron nitride crystal rod 8 is 20mm, and the diameter is 1.5mm, then use lathe on the graphite rod 6 along the A groove with a diameter of 1.5mm and a depth of 20mm is drilled in the axial direction, and finally the boron nitride crystal rod 8 is embedded in the groove of the graphite rod 6, and one end of the boron nitride crystal rod 8 is flush with the notch of the groove. The central axis of the boron nitride crystal rod 8 is on th...

Embodiment 2

[0037] A method for preparing boron nitride nanofibers by arc discharge, comprising the following steps:

[0038](1) An arc discharge chamber 2 is provided, and a mixed electrode made of graphite and boron nitride crystal is used as an anode 4. The specific preparation method of the anode 4 is to process a cylindrical graphite rod 6 and a cylindrical hexagonal boron nitride crystal with a small lathe Rod 8, the length of the cylindrical graphite rod 6 after processing is 60mm, and the diameter is 6mm, and the length of the cylindrical hexagonal boron nitride crystal rod 8 is 20mm, and the diameter is 3mm, and then use a small lathe on the graphite rod 6 along the axis Drill out a groove with a diameter of 3 mm and a depth of 20 mm, and finally embed the boron nitride crystal rod 8 in the groove of the graphite rod 6, one end of the boron nitride crystal rod 8 is flush with the notch of the groove, and then nitrided The central axis of the boron crystal rod 8 is on the same str...

Embodiment 3

[0044] A method for preparing boron nitride nanofibers by arc discharge, comprising the following steps:

[0045] (1) An arc discharge chamber 2 is provided, and a mixed electrode made of graphite and boron nitride crystal is used as an anode 4. The specific preparation method of the anode 4 is to process a cylindrical graphite rod 6 and a cylindrical hexagonal boron nitride crystal with a small lathe Rod 8, the length of the cylindrical graphite rod 6 after processing is 80mm, and diameter is 6mm, and the length of cylindrical hexagonal boron nitride crystal rod 8 is 20mm, and diameter is 4mm, and then use lathe on graphite rod 6 along the axis Drill out a groove with a diameter of 4mm and a depth of 20mm, and finally insert the boron nitride crystal rod 8 into the groove of the graphite rod 6, one end of the boron nitride crystal rod 8 is flush with the notch of the groove, and the nitriding The central axis of the boron crystal rod 8 is on the same straight line as the cent...

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Abstract

The invention relates to a method for preparing boron nitride nano-fibres by virtue of arc discharge. The method comprises the following steps: (1) providing an arc discharge chamber, installing an anode and a cathode in the arc discharge chamber, using a mixed electrode prepared from graphite and a boron nitride crystal as the anode, and connecting both of the anode and the cathode with a power supply; (2) vacuumizing the arc discharge chamber to obtain a vacuum chamber, and then charging a working gas; (3) turning on the power supply and carrying out arc discharge, and keeping a discharge voltage and a discharge current stable during the discharge process; (4) after the discharge is concluded, collecting the product at the cathode. The electrodes adopted in the method disclosed by the invention are convenient to prepare and low in cost; an electrode distance fine-adjustment system adopted is capable of continuously controlling the discharge voltage between the anode and the cathode to be a certain value, the arc discharge is stable, the automation degree is high, the operation is easy to control, a metal catalyst does not need to be added, and the obtained boron nitride nano-fibres have higher yield and quality.

Description

technical field [0001] The invention relates to a method for preparing nanofibers, in particular to a method for preparing boron nitride nanofibers by arc discharge. Background technique [0002] Boron nitride nanofibers have a hexagonal crystal structure and electronic properties similar to carbon nanofibers, the difference is that boron nitride nanofibers are composed of sp 2 The hybrid boron and nitrogen atoms replace the carbon atoms in the hexagonal crystal structure of carbon nanofibers. These structural properties make boron nitride nanofibers have high mechanical strength and thermal conductivity properties similar to carbon nanofibers and have different properties from carbon nanofibers. Unique physical and chemical properties. Boron nitride nanofibers have better chemical stability, and their anti-oxidation temperature is as high as 800 degrees Celsius, and they are wide bandgap semiconductors with a band gap of about 5eV. The unique electronic and mechanical...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B21/064B82Y30/00B82Y40/00
Inventor 吴兆丰程鲲郭磊
Owner YANCHENG INST OF TECH
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