An ultra-steep average subthreshold swing tunneling field effect transistor and its preparation method

Abstract

The invention discloses a super-steep mean sub-threshold swinging tunnelling field effect transistor and a preparation method thereof, and belongs to the field of a field effect transistor logic device in CMOS (complementary metal oxide semiconductor) super-large-scale integration (ULSI). A tunneling source zone of the tunnelling field effect transistor is a multi-layered structure, and different layers are semiconductors with continuously changed energy gaps, and the energy gaps are gradually increased along the direction perpendicular to the appliance surface, wherein the energy gap at the lowermost layer is the minimum, the energy gap at the uppermost layer is the maximum, and every energy gap in the middle is continuously changed. The super-steep mean sub-threshold swinging tunnelling field effect transistor can effectively inhibit the sub-threshold slope degradation phenomenon in the appliance transfer characteristics while obviously reduces the mean sub-threshold gradient of the tunnelling field effect transistor, and keep the steep and straight minimum sub-threshold gradient.

Description

technical field [0001] The invention belongs to the field of CMOS ultra-large scale integrated circuit (ULSI) field-effect transistor logic devices, and in particular relates to a multi-layer source structure ultra-steep average sub-threshold swing tunneling field-effect transistor and a preparation method thereof. Background technique [0002] Since the birth of integrated circuits, microelectronics integration technology has been developing continuously in accordance with "Moore's Law", and the size of semiconductor devices has been continuously reduced. As semiconductor devices enter the deep submicron range, traditional MOSFET devices are limited by the conduction mechanism of self-diffusion drift, and the subthreshold slope is limited by the thermoelectric potential kT / q, which cannot be reduced synchronously with the reduction of device size. As a result, the reduction of leakage current of MOSFET devices cannot meet the requirements of device size reduction, the energ...

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Problems solved by technology

[0003] However, unlike traditional MOSFETs, the subthreshold slope in the subthreshold region of the TFET transfer curve changes and gradually increases with the increase of the gate voltage, which leads to a TFET transfer characteristic lower than 60mV / dec The corresponding range of subthreshold slope is small, and the average subthreshold slope of the device is relatively high, which is not conducive to the application of TFET devices in the field of ultra-low power consumption

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