Temporary bonding glue for wafer backgrinding, preparation method of temporary bonding glue and bonding and de-bonding methods

A temporary bonding glue and debonding technology, applied in the bonding method of adhesive heating, aldehyde/ketone condensation polymer adhesives, adhesives, etc., can solve the problem of low thermal stability, poor corrosion resistance, etc. The problem of low debonding efficiency of the adhesive layer, etc., achieves the effect of high thermal stability, strong corrosion resistance, and improved debonding efficiency

Active Publication Date: 2015-07-29
深圳市化讯半导体材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the above-mentioned prior art, the debonding efficiency of the adhesive layer formed by temporary bonding glue is low, and expensive suppor

Method used

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  • Temporary bonding glue for wafer backgrinding, preparation method of temporary bonding glue and bonding and de-bonding methods
  • Temporary bonding glue for wafer backgrinding, preparation method of temporary bonding glue and bonding and de-bonding methods
  • Temporary bonding glue for wafer backgrinding, preparation method of temporary bonding glue and bonding and de-bonding methods

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Add 4.4g of acetaldehyde (99% solution), 4g of 4,4-diamine diphenyl ether, and 28g of DMAc into a thermal dissolution vessel equipped with a stirring device and a water bath heating system. Control the temperature of the water bath at 60-70°C and start the mixer, adjust the speed to 100-1000rpm, stir for 15 minutes and take out the above-mentioned raw materials after they are fully stirred evenly, add 20mg of FC-4430 leveling agent, 4g of polymethyl methacrylate, Stir well. Put it in a vacuum degasser for vacuum degassing, and finally seal it for storage.

Embodiment 2

[0035] In this example, the raw materials specifically include: 3g of paraformaldehyde, 4g of 4,4-diamine diphenyl ether, and 28g of solvent NMP, which are added to a thermal dissolution vessel equipped with a stirring device and a water bath heating system. The temperature of the water bath is controlled at 60-70°C and the stirrer is started, the rotating speed is adjusted to 100-1000rpm, and stirred for 15min. After cooling, it was filtered to obtain a viscous filtrate. Add 17mg 4430 leveling agent to the filtrate and stir evenly. Put it in a vacuum degasser for vacuum degassing, and finally seal it for storage.

Embodiment 3

[0037] In this example, the raw materials specifically include: 4.4g acetaldehyde (99% solution), 3.96g 4,4-diaminediphenylmethane, 28g NMP, 20mg FC-4430 type leveling agent, 4g polymethyl methacrylate ; Except this, other is the same as embodiment 1.

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PUM

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Abstract

The invention discloses temporary bonding glue for wafer backgrinding, a preparation method of the temporary bonding glue and bonding and de-bonding methods. The temporary bonding glue comprises base resin for producing the adhesive effect, wherein the base resin can be depolymerized into a low molecular compound and/or a linear low polymer under the action of strong acid, so that an adhesive layer formed by the bonding glue has an obvious depolymerization reaction under the sufficient impregnation of acid liquor, that is, the structure of a three-dimensional polymer is damaged, the adhesive layer loses efficacy by means of the generated low molecular compound or linear low polymer, and the de-bonding efficiency is improved. Besides, the decomposition temperature of the high polymer is higher than 270 DEG C, so that the thermal stability of the adhesive layer is high; the corrosion resistance of the bonding glue is high, and the preparation cost is more economical.

Description

technical field [0001] The invention relates to the technical field of adhesives, in particular to temporary bonding adhesives for wafer thinning, a preparation method, bonding and debonding methods thereof. Background technique [0002] In recent years, computers, communications, automotive electronics and other consumer products have put forward higher requirements for microelectronic packaging, that is, smaller, thinner, multi-functional and low-cost. To meet the miniaturization demands of these products, the semiconductor industry needs to thin wafers below 100 μm. Ultra-thin wafers have the characteristics of flexibility and fragility, and are easy to warp and undulate. Therefore, the device wafer is usually bonded to a thicker carrier with a temporary bonding material, and the back is thinned to form a rewiring layer. After the internal interconnection is made, external energy (light, electricity, heat and external force) is input to make the bonding layer invalid, an...

Claims

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Application Information

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IPC IPC(8): C09J161/22C09J5/06C08G12/08
CPCC08G12/08C09J5/06C09J161/22
Inventor 孙蓉方浩明张国平邓立波
Owner 深圳市化讯半导体材料有限公司
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