Ultraviolet semiconductor light-emitting device and manufacturing method thereof

A light-emitting device and semiconductor technology, applied in the field of optoelectronics, can solve problems such as difficult ohmic contact and lack of effective solutions, and achieve the effect of overcoming large surface resistance, high external quantum efficiency, and high reflectivity
CN104810455BActive Publication Date: 2017-07-07NANJING UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
NANJING UNIV
Publication Date
2017-07-07

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Abstract

The invention discloses an ultraviolet semiconductor light emitting device and a manufacturing method thereof. The device comprises an epitaxial layer composed of an n-type layer, a quantum well layer and a p-type layer, a p-type electrode and an n-type electrode. The p-type layer is further provided with a graphene-Ag nanocomposite layer and a conductive reflecting layer sequentially, and the graphene-Ag nanocomposite layer and the p-type layer are in ohmic contact. Furthermore, the graphene-Ag nanocomposite layer includes an Ag nano material layer formed on the p-type layer, and the Ag nano material layer comprises Ag nano points and / or Ag nano lines and a graphene film covering the Ag nano material layer; or, graphene quantum points load an Ag nanoparticle composite layer. The device has the advantages of high external quantum efficiency, high light emitting efficiency, low start voltage, fine heat radiation and high stability, the manufacturing process is simple and controllable, cost is low, and the device is adaptive to industrial production.
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Description

technical field

[0001] The invention relates to a semiconductor light-emitting element, in particular to an ultraviolet semiconductor light-emitting device and a manufacturing method thereof. The semiconductor light-emitting device can be used in fields such as transportation, medical treatment, display and white light illumination, and belongs to the field of optoelectronic technology. Background technique

[0002] GaN-based ultraviolet / deep ultraviolet light-emitting diodes (LEDs) have the potential advantages of small size, long life, high efficiency, environmental protection, and energy saving, and they can replace existing ones in industrial curing, disinfection, water purification, medical and biochemistry, and high-density optical recording. There are ultraviolet light sources such as mercury lamps and gas lasers, which have important application prospects and broad market demands.

[0003] LED chips are usually divided into front-mount, flip-chip and vertical structu...

Claims

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