Application of Cr3+ doped PZT film in preparation of ferroelectric film solar cell

Abstract

The invention discloses application of a Cr3+ doped PZT film in preparation of a ferroelectric film solar cell. The mole percentage of Cr3+ in the Cr3+ doped PZT film ranges from 2 to 10%; the solar cell comprises glass, an ITO conductive layer, a Cr3+ doped PZT film layer and another ITO conductive layer successively from bottom to top; and the Cr3+ doped PZT film layer is arranged between the ITO conductive layers. Cr3+ doped ions of the mole percentage of 2 to 10 % is introduced into the PZT film layer for the first time to form the Cr3+ doped PZT film; a ferroelectric film of relatively high residual polarization is obtained at a relatively low annealing temperature; and compared with a ferroelectric film solar cell of a common PZT / ITO structure, the residual polarization is improved by 2 to 3 times, the photoelectric conversion efficiency is improved by 6 times, and the effects are better.

Description

technical field [0001] The invention belongs to a ferroelectric thin film solar cell, in particular to the application of a Cr3+ ion-doped PZT thin film in the preparation of a ferroelectric thin film solar cell. Background technique [0002] Solar energy is the most abundant renewable energy resource, with unique advantages and huge potential for development and utilization. Solar power generation is a new technology in the way of solar energy utilization. Traditional solid-state solar cells mainly include: crystalline silicon (monocrystalline and polycrystalline) solar cells, amorphous / microcrystalline silicon thin-film solar cells and compound solar cells (GaAs, CIGS). The maximum voltage that a conventional solid-state optoelectronic device can generate is equal to its electronic energy gap, and even so-called tandem cells—in which there are stacks of semiconductor positive-negative junctions—are limited in the photovoltaic voltage they can generate because of the depth ...

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Problems solved by technology

However, high-temperature annealing (generally above 600 degrees) is required to deposit PZT thin films. During the high-temperature annealing process, the ITO transparent electrode will decompose, resulting in greatly reduced transparency and conductivity; due to the presence of a large number of oxygen vacancies (with positive Electricity, similar to holes in semiconductors), some oxygen vacancies in ITO will diffuse into the PZT film during high temperature annealing, and these oxygen vacancies will partially or completely shield the spontaneous polarization of the PZT film as a space charge, resulting in remanent polarization greatly reduced, the depolarization field is reduced, resulting in generally lower photoelectric conversion efficiencies

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