Production method for depositing iron oxide film on ITO conductive glass

A technology of conductive glass and iron oxide, which is applied in the field of metal oxide semiconductor thin film preparation, can solve the problems of unresolved film uniformity and adhesion firmness, complex control factors and conditions, and high equipment requirements, and achieves convenient control and Flexible, good light transmission performance, low equipment requirements

Inactive Publication Date: 2015-08-19
FUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the preparation of metal oxide semiconductor thin film materials such as iron oxide generally uses chemical vapor deposition method, sputtering method, sol-gel method, etc. These methods either require high equipment, and the control factors and conditions are complicated, resulting in high preparation costs. , or the prepared film is uneven, with many surface defects, poor light tr

Method used

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  • Production method for depositing iron oxide film on ITO conductive glass
  • Production method for depositing iron oxide film on ITO conductive glass
  • Production method for depositing iron oxide film on ITO conductive glass

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Initial solution preparation: Weigh a certain amount of ferric nitrate and sodium oxalate so that the molar ratio of ferric ions and oxalate is 1:3, dissolve them in deionized water to form a solution of ferric trioxalate with a concentration of 0.05M.

[0025] Conductive glass preparation: Cut the conductive glass according to the size of 2cm×2cm, and then wash it. The washing sequence is detergent solution-deionized water-acetone-absolute ethanol, and each solution is washed under ultrasonic for 20min.

[0026] Thin film deposition: Put the ITO conductive glass vertically into the polytetrafluoroethylene-lined cup of the reaction kettle, pour the initial reaction solution, put it in the stainless steel reaction kettle, put it into the constant temperature furnace after sealing, and set the temperature 160°C, constant temperature for 12 hours, after natural cooling to room temperature, unseal, take out the conductive glass, wash with deionized water and ethanol several ...

Embodiment 2

[0028] The preparation of the initial solution and the preparation of the conductive glass are the same as in Example 1.

[0029] Thin film deposition: the process is the same as Example 1, but the reaction conditions are changed to 170° C. for 8 hours at a constant temperature, and an iron oxide film with good transparency is also obtained.

Embodiment 3

[0031] The preparation of the initial solution and the preparation of the conductive glass are the same as in Example 1.

[0032] Thin film deposition: the process is the same as Example 1, but the reaction conditions are changed to 180° C. for 4 hours at a constant temperature, and an iron oxide film with good transparency is also obtained.

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Abstract

The invention belongs to the technical filed of production of metal oxide semiconductor thin film materials, and concretely relates to a production method for depositing an iron oxide film on ITO conductive glass. The method is a simple production method for depositing the highly-transparent, uniform and stable iron oxide film on the ITO conductive glass. The iron oxide film is deposited on the ITO conductive glass through a hydrothermal technology by adopting soluble ferric salt and soluble oxalate as raw materials. The iron oxide film obtained in the invention is very uniform, has good light transmission performance and can be firmly combined with a substrate. The raw materials used in the invention are simple and cheap, and the raw materials and reaction raffinate have no pollution, so large scale industrial application does not generate the pollution problem. The method has the advantages of simple process operation, low requirements on a device, small energy consumption, and convenient and flexible control of the film.

Description

technical field [0001] The invention belongs to the technical field of preparation of metal oxide semiconductor thin film materials, and in particular relates to a preparation method for depositing iron oxide thin films on ITO conductive glass. Background technique [0002] Metal oxide semiconductor thin films are widely used in many fields. Research on their preparation, properties and applications is one of the hotspots in the field of materials. How to economically and effectively improve the uniformity, light transmittance, and adhesion of thin film materials to the substrate It is of great importance to the performance and practical application of such materials. Iron oxide film is a semiconductor metal oxide material with good application prospects, which can be used in photocatalytic electrolysis of water to produce hydrogen, gas sensors, magnetic recording devices, special window materials, solar cell electrode materials and other fields. [0003] At present, the pr...

Claims

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Application Information

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IPC IPC(8): C03C17/34
Inventor 沈水发徐美丽车荣峰
Owner FUZHOU UNIV
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