Production method for depositing iron oxide film on ITO conductive glass

A technology of conductive glass and iron oxide, which is applied in the field of metal oxide semiconductor thin film preparation, can solve the problems of unresolved film uniformity and adhesion firmness, complex control factors and conditions, and high equipment requirements, and achieves convenient control and Flexible, good light transmission performance, low equipment requirements
CN104844016AInactive Publication Date: 2015-08-19FUZHOU UNIV
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
FUZHOU UNIV
Publication Date
2015-08-19
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention belongs to the technical filed of production of metal oxide semiconductor thin film materials, and concretely relates to a production method for depositing an iron oxide film on ITO conductive glass. The method is a simple production method for depositing the highly-transparent, uniform and stable iron oxide film on the ITO conductive glass. The iron oxide film is deposited on the ITO conductive glass through a hydrothermal technology by adopting soluble ferric salt and soluble oxalate as raw materials. The iron oxide film obtained in the invention is very uniform, has good light transmission performance and can be firmly combined with a substrate. The raw materials used in the invention are simple and cheap, and the raw materials and reaction raffinate have no pollution, so large scale industrial application does not generate the pollution problem. The method has the advantages of simple process operation, low requirements on a device, small energy consumption, and convenient and flexible control of the film.
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Description

technical field

[0001] The invention belongs to the technical field of preparation of metal oxide semiconductor thin film materials, and in particular relates to a preparation method for depositing iron oxide thin films on ITO conductive glass. Background technique

[0002] Metal oxide semiconductor thin films are widely used in many fields. Research on their preparation, properties and applications is one of the hotspots in the field of materials. How to economically and effectively improve the uniformity, light transmittance, and adhesion of thin film materials to the substrate It is of great importance to the performance and practical application of such materials. Iron oxide film is a semiconductor metal oxide material with good application prospects, which can be used in photocatalytic electrolysis of water to produce hydrogen, gas sensors, magnetic recording devices, special window materials, solar cell electrode materials and other fields.

[0003] At present, the pr...

Claims

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