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Method for recovering sapphire substrate

A sapphire substrate and sapphire technology, applied in the field of optoelectronics, can solve the problems of high production cost and complicated etching process, and achieve the effects of short recovery period, low cost and remarkable removal effect.

Inactive Publication Date: 2015-08-26
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the etching process used in this method is relatively complicated, and the production cost of the equipment is relatively high.

Method used

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  • Method for recovering sapphire substrate
  • Method for recovering sapphire substrate
  • Method for recovering sapphire substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Such as figure 2 Shown, a kind of method of reclaiming sapphire substrate comprises steps as follows:

[0045] (1) get waste epitaxial wafer,

[0046] Receive waste epitaxial wafers, check the number of wafers, and check whether the wafers are complete;

[0047] (2) The first high temperature baking,

[0048] Put the waste epitaxial wafer into a high-temperature baking furnace for the first high-temperature baking. The baking time is 2.5 hours, the baking temperature is 850°C, and the atmosphere in the baking room is a mixture of nitrogen and hydrogen. Among them, hydrogen occupies The volume ratio is 0.5%;

[0049] (3) the first cleaning,

[0050] The epitaxial wafer after the above-mentioned step (2) baking is cleaned for the first time, and the etching solution for the first cleaning is a mixed solution of sulfuric acid and hydrogen peroxide, the concentration of sulfuric acid is 95%, and the volume ratio of sulfuric acid and hydrogen peroxide is 3:4, corrosion t...

Embodiment 2

[0059] A kind of method for reclaiming sapphire substrate as described in embodiment 1, its difference is,

[0060] The baking time in step (2) is 8 hours, the baking temperature is 1200°C, and the volume occupied by hydrogen is 5%;

[0061] The corrosion solution described in step (3) is a mixed solution of phosphoric acid and hydrogen peroxide, the concentration of phosphoric acid is 90%, the volume ratio of phosphoric acid and hydrogen peroxide is 2: 3, and the corrosion time is 10 minutes;

[0062] The baking time in step (4) is 8 hours, the baking temperature is 1200° C., and the volume ratio of ammonia gas is 4%;

[0063] The second cleaning described in step (5) is first cleaned with a mixed solution of phosphoric acid and hydrogen peroxide, wherein the concentration of phosphoric acid is 87%, the volume ratio of phosphoric acid and hydrogen peroxide is 1:3, and the corrosion time is 15 minutes; Mixed liquid cleaning, wherein the concentration of ammonia water is 68%, ...

Embodiment 3

[0065] A kind of method for reclaiming sapphire substrate as described in embodiment 1, its difference is,

[0066] The baking time in step (2) is 15 hours, the baking temperature is 1600° C., and the volume occupied by hydrogen is 15%;

[0067] The corrosion solution described in step (3) is a mixed solution of nitric acid and hydrogen peroxide, the concentration of nitric acid is 82%, the volume ratio of nitric acid and hydrogen peroxide is 3: 2, and the corrosion time is 20 minutes;

[0068] The baking time in step (4) is 14 hours, the baking temperature is 2000°C, and the volume ratio of ammonia is 15%;

[0069] The second cleaning described in step (5) is first cleaned with a mixed solution of nitric acid and hydrogen peroxide, wherein the concentration of nitric acid is 80%, the volume ratio of phosphoric acid and hydrogen peroxide is 2: 1, and the corrosion time is 20 minutes; Mixed liquid cleaning, wherein the concentration of ammonia water is 89%, the mixing ratio of...

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Abstract

The invention provides a method for recovering sapphire substrates for solving the problems in the prior art that the production cost of sapphire substrates is high and the substrates cannot be reused. According to the method, the wet etching is cooperated with physical high-temperature roasting, and a special corrosive liquid can remove gallium nitride particles and ordinary residues and has obvious removing effect of refractory metal residue and surface oil contaminant. The method can be used for recovering PSS substrates and plain film substrates in a sustainable manner, and has the advantages of short recovery period, simple operation and low cost. Through the operation procedures, each piece of sapphire substrate can reach the level of a first-use substrate, the quality epitaxial wafer is produced, and the recovery cost of a single piece needs only 10 yuan.

Description

technical field [0001] The invention relates to a method for recycling a sapphire substrate, belonging to the technical field of optoelectronics. Background technique [0002] Gallium nitride material has a series of advantages such as wide bandgap, high electron mobility, high thermal conductivity, high stability, etc., so it is used in high-brightness blue light-emitting diodes (LEDs), blue semiconductor lasers (LDs) and radiation-resistant, high-frequency , high temperature, high voltage and other electronic power devices have a wide range of practical applications and huge market prospects. The diversity of GaN-based LED application fields determines that its market demand is very hot. In 2010, the supply of GaN-based LEDs was in short supply in both mainland China and Taiwan. [0003] During the epitaxial growth process, due to uncontrollable factors such as process fluctuations or equipment abnormalities, some waste epitaxial wafers that do not meet the storage standa...

Claims

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Application Information

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IPC IPC(8): H01L33/00
CPCH01L33/0095H01L2933/0008
Inventor 逯瑶王志强王成新曲爽李毓锋
Owner SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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