Method for preparing few-layer black scales by ultrasonically stripping black scale

A technology of ultrasonic stripping and black phosphorus flakes, which is applied in the preparation of functional materials and the field of optoelectronic materials, can solve the problems of low purity of black phosphorus, high atmospheric pressure temperature, high energy consumption, etc., and achieve the effect of high quality, less impurities and easy operation
CN104876199AActive Publication Date: 2015-09-02HEFEI GUOXUAN HIGH TECH POWER ENERGY
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
HEFEI GUOXUAN HIGH TECH POWER ENERGY
Publication Date
2015-09-02

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Abstract

The invention relates to a method for preparing few-layer black scales by ultrasonically stripping a black scale. The method comprises the steps of uniformly mixing black scale powder and an intercalator in an organic solvent according to a given ratio to obtain a mixture, insulating the air, ultrasonically treating the mixture in water bath, and carrying out vacuum suction filtration and vacuum drying to obtain a few-layer black scale material. A series of compounds such as cetyl trimethyl ammonium bromide, phenanthrene and naphthalene are used as the intercalator to prepare the few-layer black scale. Compared with the prior art, the prepared few-layer black scale has advantages of few defects, few impurities, high quality and the like. Meanwhile, the process is simple to operate and low in cost, and the prepared few-layer black scale is expected to substitute the graphene material to be applied to the field of a photoelectric material.
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Description

technical field

[0001] The invention belongs to the technical field of preparation of functional materials, and relates to a method for ultrasonically exfoliating black phosphorus to prepare few-layer black scales, and the prepared few-layer black phosphorus flakes can be applied to the field of photoelectric materials. Background technique

[0002] Black phosphorus is a crystal with metallic luster, which can be formed by transforming white phosphorus under high pressure and temperature. It has a sheet structure similar to graphite and has good electrical conductivity. One of the focuses of new two-dimensional semiconductor research. Compared with graphene, few-layer black phosphorus flakes have more obvious advantages in the field of optoelectronic materials: first, graphene has no semiconductor band gap, that is to say, it is difficult to complete the conversion between conductors and insulators, and cannot realize digital circuits. Logical on and off, and black phosphor...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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