High-temperature wave absorbing metamaterial and preparation method thereof

A metamaterial and high-temperature technology, applied in chemical instruments and methods, electrical components, layered products, etc., can solve the problems of poor low-frequency absorption performance, low absorption efficiency, poor designability, etc., and achieve good microwave absorption performance and simple structure , the performance is easy to adjust the effect

Inactive Publication Date: 2015-09-09
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to propose a high-temperature wave-absorbing metamaterial and its preparation method, which overcome the shortcomings of the c...

Method used

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  • High-temperature wave absorbing metamaterial and preparation method thereof
  • High-temperature wave absorbing metamaterial and preparation method thereof
  • High-temperature wave absorbing metamaterial and preparation method thereof

Examples

Experimental program
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Embodiment 1

[0027] Titanium diboride ceramic powder was prepared by self-propagating high-temperature synthesis method, and then dense titanium diboride ceramics with a certain thickness were prepared by hot-pressing sintering method, and titanium diboride ceramics were cut into thicknesses of 0.5 mm, a square sheet with a side length a of 5 mm. The aluminum oxide dielectric substrate and the cut titanium diboride ceramic sheet are subjected to ultrasonic surface treatment in ethanol to ensure that the surface to be bonded is clean and free of oil, and then dried in an oven. The titanium diboride ceramic sheets are periodically bonded on the alumina dielectric substrate with an inorganic high-temperature adhesive, and are periodically arranged to form a conductive ceramic array, and then the other side of the alumina dielectric substrate and the reflective backplane are passed through an inorganic high-temperature For adhesive connection, heat at 30°C for 1.5 hours, then raise the tempera...

Embodiment 2

[0029] Titanium diboride ceramic powder was prepared by self-propagating high-temperature synthesis method, and then dense titanium diboride ceramics with a certain thickness were prepared by hot-pressing sintering method, and titanium diboride ceramics were cut into thicknesses of 0.5 mm, a square sheet with a side length a of 15mm. The aluminum oxide dielectric substrate and the cut titanium diboride ceramic sheet are subjected to ultrasonic surface treatment in ethanol to ensure that the surface to be bonded is clean and free of oil, and then dried in an oven. The titanium diboride ceramic sheets are periodically bonded on the alumina dielectric substrate with an inorganic high-temperature adhesive, and are periodically arranged to form a conductive ceramic array, and then the other side of the alumina dielectric substrate and the reflective backplane are passed through an inorganic high-temperature For adhesive connection, heat at 35°C for 1.5 hours, then raise the tempera...

Embodiment 3

[0031] Titanium diboride ceramic powder was prepared by self-propagating high-temperature synthesis method, and then dense titanium diboride ceramics with a certain thickness were prepared by hot-pressing sintering method, and titanium diboride ceramics were cut into thicknesses of 0.5 About mm, the square sheet whose side lengths are a=5mm and b=6mm respectively. The silicon carbide / silicon nitride composite ceramic dielectric substrate and the cut titanium diboride ceramic sheet are subjected to ultrasonic surface treatment in ethanol to ensure that the surface to be bonded is clean and free of oil, and then dried in an oven. Use an inorganic high-temperature adhesive to periodically bond titanium diboride ceramic flakes on a silicon carbide / silicon nitride composite ceramic dielectric substrate, and form a periodic arrangement to form a conductive ceramic array, and then place the silicon carbide / silicon nitride composite ceramic The other side of the dielectric substrate i...

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Abstract

The invention belongs to the technical field of electronic materials, relates to an electromagnetic wave absorbing material, and particularly relates to a high-temperature wave absorbing metamaterial and a preparation method thereof. The metamaterial comprises a plurality of conductive ceramic chips, a ceramic dielectric substrate and a reflecting back plate, wherein the plurality of conductive ceramic chips are fixed on a surface of the ceramic dielectric substrate by bonding, and are arranged as periodic units to form a conductive ceramic array; and the reflecting back plate is fixed on the other surface of the ceramic dielectric substrate. Compared with the prior art, the metamaterial has the advantages that the metamaterial can nearly completely absorb electromagnetic wave at certain frequency, is simple in structure, thin, simple in preparation and easy to adjust in performance, and can realize broadband absorption by certain design and show good wave absorbing performance at a high temperature.

Description

technical field [0001] The invention belongs to the technical field of electronic materials, and relates to electromagnetic wave absorbing materials, in particular to a high-temperature wave-absorbing metamaterial and a preparation method thereof. Background technique [0002] Absorbing material is a functional material that can absorb and convert electromagnetic waves incident on the surface of the material into other forms of energy and dissipate them. It has been widely used in electromagnetic shielding, radar antennas, stealth technology and other fields. The absorbing material can be divided into electric loss type and magnetic loss type according to the loss mechanism. The magnetic loss type absorbing material has both electric and magnetic loss characteristics, and its absorption capacity is generally better than that of the electric loss type, so it is widely used. Although the magnetic absorbing material has the advantages of thin thickness and wide absorption frequ...

Claims

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Application Information

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IPC IPC(8): H05K9/00B32B18/00B32B9/04B32B15/00
Inventor 官建国王毅李维王维
Owner WUHAN UNIV OF TECH
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