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Doped cerium oxide catalytic film with preferred orientation, preparation and applications thereof

A technology of preferential orientation and cerium oxide, which is applied in electrochemical generators, ion implantation plating, fuel cells, etc., can solve the problems such as the inability to prepare doped cerium oxide films, achieve improved electrocatalytic oxidation performance, and reduce anode The effect of lowering the polarization resistance and reducing the cathode polarization resistance

Active Publication Date: 2015-09-23
DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Since the traditional ceramic sintering method cannot prepare doped cerium oxide films with preferred orientation, it is necessary to use physical vapor deposition technology to prepare doped ceria films

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] In nickel oxide with Y 2 o 3 Stable ZrO 2 Composite anode / Y 2 o 3 Stable ZrO 2 Dense Zr sputtered with preferred orientation of (100) on membrane electrode (NiO-YSZ / YSZ) 2 o 3 Doped CeO 2 (Zr 0.2 Ce 0.8 o 1.9 ) thin film, ultrasonically cleaned the anode-supported membrane electrode with acetone, ethanol, and distilled water in sequence and dried it, then put it into the vacuum chamber of the magnetron sputtering apparatus, adjust the target base distance to about 6cm, and use cerium / gadolinium alloy The material is the target, the purity of the target is above 99.99%, the molar ratio of cerium / zirconium is 8 / 2, and the vacuum is 8*10 -4 Pa, then heat the substrate table, the temperature rises to 300°C, the argon flow rate is 10.0 sccm, the oxygen flow rate is 1.2 sccm, and the sputtering power is 9W / cm 2 , the sputtering pressure is 0.5Pa, the rotation speed of the substrate table is set at 5 cycles / min, and the thickness is about 500nm. 0.2 Ce 0.8 o 1.9 ...

Embodiment 2

[0022] In nickel oxide and Gd 2 o 3 Doped CeO 2 Composite anode / Gd 2 o 3 Doped CeO 2 Dense SnO with preferred orientation of (100) sputtered crystal plane on membrane electrode (NiO-GDC / GDC) 2 Doped CeO 2 (Sn 0.1 Ce 0.9 o 2 ) thin film, adjust the target base distance to about 6cm, use cerium / gadolinium alloy material as the target material, the target material purity is above 99.99%, the cerium / tin molar ratio is 9 / 1, and the vacuum is 8*10 -4 Pa, then heat the substrate table, the temperature rises to 400°C, the flow rate of argon gas is 10.0 sccm, the flow rate of oxygen gas is 1.2 sccm, and the sputtering power is 9W / cm 2 , the sputtering pressure is 0.5Pa, the rotation speed of the substrate table is set at 5 cycles / min, and the thickness is about 200nm. 0.1 Ce 0.9 o 2 After the sputtering of the film, silver paste is coated on it, and the battery performance test is carried out on a four-terminal battery test device. Air is used as the cathode gas, and wet hy...

Embodiment 3

[0024] in la 0.6 Sr 0.4 co 0.2 Fe 0.8 o 2-x (0≤x≤0.3) / Gd 0.1 Ce 0.9 o 1.95 Gd of cathode-supported membrane electrode 0.1 Ce 0.9 o 1.95 Pr with (111) preferred orientation sputtered on electrolyte surface 0.1 Ce 0.9 o 1.95 Anode film, where Pr 0.1 Ce 0.9 o 1.95 The sputtering of the thin film was carried out at a temperature of 200oC with an Ar flow rate of 20.0ml min-1 ,O 2 The flow rate is 2.0ml min -1 , The base distance of the target is about 6cm, the target is made of cerium / praseodymium (9 / 1 molar ratio) alloy material, the purity of the target is above 99.99%, and the vacuum is pumped to 8*10 -4 Pa, sputtering power is 12W / cm 2 , the sputtering pressure is 0.5Pa, the rotation speed of the substrate table is set at 5 cycles / min, and the thickness is about 200nm. 0.1 Ce 0.9 o 1.95 After the sputtering of the thin film, silver paste is coated on it, and the battery performance test is carried out on a four-terminal battery test device, with air as the c...

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Abstract

The invention discloses a doped cerium oxide film with a preferred exposed crystal face. The film can be used as the electrode of a solid oxide fuel battery, and can also be used as a catalyst for catalytic reactions. The film is prepared through a magnetron reactive sputtering technology. The application of the doped cerium oxide film with a preferred exposed crystal face can effectively improve the electro-catalytic activity of negative electrode (for oxygen gas) and positive electrode (for fuel gas) of a solid oxide fuel battery, the battery polarization resistance is reduced, and the medium-low temperature performance of battery is effectively improved.

Description

technical field [0001] The invention relates to the field of solid oxide fuel cells, in particular to the preparation and application of a doped cerium oxide film electrode material with preferentially exposed crystal planes. Background technique [0002] Solid oxide fuel cell is an energy conversion device that can efficiently convert the chemical energy in fuel gas (such as hydrogen, natural gas, coal gas, etc.) Low noise, it is an ideal distributed power station and centralized power station technology, and can also be applied to vehicle auxiliary power supply, portable power supply, etc. [0003] In order to reduce manufacturing costs, improve long-term battery stability and reliability, and shorten start-up time, medium and low temperature solid oxide fuel cells with an operating temperature of 400-700 °C have become the focus of research and development at home and abroad. Cerium oxide-based thin films can be used as cathodes or anodes for solid oxide fuel cells opera...

Claims

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Application Information

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IPC IPC(8): H01M4/90H01M4/86C23C14/35C23C14/08
CPCC23C14/08C23C14/35H01M4/86H01M4/9016H01M4/9025H01M8/126Y02E60/50
Inventor 程谟杰武卫明
Owner DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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