Method for manufacturing vertical type high-power gallium nitride PIN diode

Abstract

The invention provides a method for manufacturing a vertical type high-power gallium nitride PIN diode. The method comprises the following steps of providing a semiconductor lamination or a heterogeneous substrate; and forming a platform on the semiconductor lamination or the heterogeneous substrate. Compared with an ordinary Si and GaAs material, a wide-band-gap material (three-nitrogen-atom compound) has a relatively good electronic characteristic, and therefore high operation stability and low temperature sensitivity are realized. The method of the invention is particularly suitable for use of a high-power electronic device. A vertical type gallium nitride high-power component which is developed by the method of the invention can supply a reverse breakdown voltage which exceeds 600V, a relatively low on-resistance which is lower than 5-m omega-cm<2> and a high downstream current which reaches up to 3-A / mm<2>.

Description

technical field [0001] The present invention discloses a method for manufacturing vertical high-power gallium nitride PIN diodes. In particular, a low-concentration doped layer of gallium nitride with a thickness of about 8um is grown on a sapphire substrate, and the reverse breakdown voltage can reach more than 600V. , conduction electric group 5mΩ-cm 2 the following. Background technique [0002] Vertical III-N (III-Nitride) power components include power diodes and power transistors; among them, the transistors will use the vertical channel gate MISFET as the development target, but the PIN diodes can also monitor the epitaxial quality. Only lower dislocation defect density has higher reverse breakdown voltage and lower leakage current. [0003] Due to the excellent properties of GaN, such as wide energy gap (~3.4eV), high critical electric field (~3MV / cm), high electron saturation velocity (~2.5×10 7 cm / s), thermal stability, chemical inertness, etc., III-Nitride comp...

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Problems solved by technology

[0004] However, the AlGaN / GaN HEMT structure has some disadvantages that are not easy to solve: 1) Because it is a lateral conduction element, it needs to occupy a large chip area, and the characteristic on-resistance (R on,sp ) is not easy to reduce

2) Up to ~10 13 cm -2 The concentration of native 2DEG leads to the threshold voltage of the device (V th ) is usually a negative value, resulting in a Normally-on (normally open) characteristic

3) Since it is a surface lateral component, the path of the current is very close to the surface, and any surface defects will affect the DC and switching characteristics of the component

At present, a lot of research is concentrated in this field, but the progress is limited, and it has not been successfully introduced into the high-power market. The product specifications are below 200V.

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