Solar spectrum selective absorbing coating and preparation method thereof

A technology of solar spectrum and absorption coating, applied in coating, solar thermal device, solar thermal power generation and other directions, can solve the problems of difficult control of coating process, increased absorption in near-infrared region, inconvenient for mass production, etc. Coating equipment requires low, low thermal emissivity, and the effect of simple preparation process

Inactive Publication Date: 2015-10-14
TAHOE TECH
View PDF6 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As we all know, silicon oxide SiOx with non-ideal stoichiometric composition, X can exist in a range (0

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solar spectrum selective absorbing coating and preparation method thereof
  • Solar spectrum selective absorbing coating and preparation method thereof
  • Solar spectrum selective absorbing coating and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0033] For the preparation of the substrate, a polished metal plate or glass plate is selected, and after mechanical cleaning, a radio frequency argon ion cleaning is performed to remove the surface contamination layer and oxide layer, and to enhance the surface activity of the substrate.

[0034] Infrared reflective layer preparation, a metal infrared reflective layer is prepared on the surface of the above-mentioned base layer by (pulsed) DC magnetron sputtering. The selected target material can be metallic aluminum (purity above 99.7%).

[0035] The absorption layer is prepared by (pulsed) DC magnetron sputtering method to prepare the absorption layer on the above-mentioned infrared reflection layer. The selected target material is semiconductor Ge (purity above 99.7%).

[0036] The anti-reflective layer is prepared by (pulsed) DC reactive magnetron sputtering method to prepare the anti-reflective layer on the above absorption layer. The selected target is metal Ti (purity above 99...

Embodiment example

[0038] Table 1 shows the process control thickness of each single-layer film in an example of preparing a spectrally selective absorption coating based on the intrinsic absorption of semiconductor germanium by magnetron sputtering.

[0039] Table 1

[0040]

[0041] The preparation of the embodiment was carried out according to the above preparation method, and the specific operation steps are as follows:

[0042] 1) Cleaning of the glass substrate: first use a neutral detergent to clean the glass substrate; then in the filming room of the coating equipment, the surface of the glass substrate is bombarded with a radio frequency ion source for secondary cleaning. The process parameters are set as follows: RF The sputtering power of the power supply is 200w, the flow of working gas Ar (purity 99.99%) is 45sccm, the working pressure is 9.8×10-2mTorr, and the sputtering time is 360s.

[0043] 2) The glass substrate is transported into the sputtering chamber through the filming equipment i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a solar spectrum selective absorbing coating. The coating structure comprises a substrate 1, an infrared reflecting layer 2, a semiconductor absorbing layer 3 (germanium) and an anti-reflection layer 4 which is composed of a medium layer 41 with a high refractive index and a medium layer 42 with a low refractive index from the substrate to an air interface in sequence. The solar spectrum selective absorbing coating has excellent spectrum selectivity, and has a steep absorbing-reflecting transition region; absorptivity alpha within a solar spectrum range (0.3-2 microns) is relatively high, absorptivity / radiance epsilon in a thermal-radiation infrared area (2-50 microns) is extremely low, and alpha / epsilon of the coating is much higher than that of a current commercial product, so that the coating is suitable for a low-power optical focusing medium-temperature solar heat collector; and the preparation process is simple, low in requirement on film coating equipment, and suitable for large-scale low-cost production.

Description

Technical field [0001] The invention relates to a spectral selective absorption coating and a preparation method thereof, in particular to a solar spectrum selective absorption coating based on an antireflection layer-semiconductor-metal interference film system and a preparation method thereof. Background technique [0002] The solar spectrum selective absorption coating is the core material to realize solar thermal conversion. On the one hand, it has a high absorption rate in the sunlight waveband (0.3μm-2.5μm), and on the other hand, it has a high absorption rate in the infrared heat radiation waveband (2.5μm). μm-50μm) has low absorptivity and emissivity, thereby inhibiting infrared radiation heat dissipation. One of the important indexes to measure the selective absorption performance is the ratio of the solar spectral absorptivity α to the infrared radiance ε(T), α / ε. [0003] The current spectral selective coating film structure used in solar collectors can generally be sum...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): F24J2/48B32B15/04B32B15/20B32B15/00B32B9/04C23C14/35C23C14/14C23C14/08
CPCC23C14/08C23C14/021C23C14/165C23C14/185Y02E10/40F24S70/30F24S70/225C23C14/35C23C14/022C23C14/0036
Inventor 刘静项晓东汪洪
Owner TAHOE TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products