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Cuprous oxide based heterojunction solar cell and preparation method thereof

A solar cell, cuprous oxide-based technology, applied in the field of solar cells, can solve problems such as energy band mismatch, low photoelectric conversion efficiency, easy to produce interface recombination, etc., to achieve lower product cost, broad application prospects, and abundant storage capacity Effect

Active Publication Date: 2015-10-21
ZHEJIANG UNIV
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Problems solved by technology

In the above method, the conversion efficiency of solar cells is much different from the theoretical value. On the one hand, the reason for limiting the conversion efficiency of solar cells is that the thickness required for the cuprous oxide film to absorb 90% of the incident light is much larger than that of the photogenerated carriers in the cuprous oxide film. The farthest transmission length; on the other hand, because there are a large number of interface states at the interface of the two materials, and the energy bands of the two materials do not match, the generated photogenerated carriers are easy to recombine at the interface, which reduces the photogenerated load. The separation efficiency of the carrier, two reasons make the photo-generated carrier cannot be effectively separated and collected, making the photoelectric conversion efficiency very low

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  • Cuprous oxide based heterojunction solar cell and preparation method thereof

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Embodiment 1

[0024] 1) Use ordinary quartz glass as the substrate 1, ultrasonically clean it in acetone, ethanol, and deionized water for 15 minutes, and use N 2 blow dry.

[0025] 2) 8 nm of metallic chromium as an adhesion layer and 100 nm of metallic gold as a bottom electrode were sequentially deposited on the substrate 1 by electron beam evaporation to obtain a chromium-gold composite electrode 2 .

[0026] 3) The P-type cuprous oxide layer 3 is grown on the above-mentioned chromium-gold composite electrode 2 by the electrochemical deposition method. The specific method is: use the three-electrode method to prepare 0.2mol / L CuSO 4 and 3mol / L lactic acid aqueous solution, adjust the pH value to 12.5 with 2mol / L NaOH solution. The quartz glass deposited with the chromium-gold composite electrode 2 in step (2) was used as the working electrode, and the Ag / AgCl reference electrode and the platinum counter electrode were used to deposit at 40°C for 1 hour by constant potential method to o...

Embodiment 2

[0032] 1) Use ordinary quartz glass as the substrate 1, ultrasonically clean it in acetone, ethanol, and deionized water for 15 minutes respectively, and use N 2 blow dry.

[0033] 2) 8 nm of metallic chromium as an adhesion layer and 120 nm of metallic gold as a bottom electrode were sequentially deposited on the substrate 1 by electron beam evaporation to obtain a chromium-gold composite electrode 2 .

[0034]3) The P-type cuprous oxide layer 3 is grown on the above-mentioned chromium-gold composite electrode 2 by the electrochemical deposition method. The specific method is: use the three-electrode method to prepare 0.2mol / L CuSO 4 and 3mol / L lactic acid aqueous solution, adjust the pH value to 12.8 with 2mol / L NaOH solution. The quartz glass deposited with the chromium-gold composite electrode 2 in step (2) was used as the working electrode, and the Ag / AgCl reference electrode and the platinum counter electrode were used to deposit at 40°C for 1 hour by constant potential...

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Abstract

The invention discloses a cuprous oxide based heterojunction solar cell. A Cr-Au composite electrode, an cuprous oxide layer, a ZnO:S buffer layer, a ZnO:Al layer and an aluminum gate electrode are formed on a substrate from bottom up successively. The preparation method includes preparing the Cr-Au composite electrode on the substrate; growing the cuprous oxide layer by adopting an electrochemical deposition method; growing the ZnO:S buffer layer and the ZnO:Al layer on the cuprous oxide layer successively; and preparing the aluminum gate electrode on the ZnO:Al layer. According to the invention, the buffer layer is made of ZnO:S, so that interface combination of electrons and electron holes can be prevented. P-N junction reverse saturated current can be reduced, carrier separating and colleting efficiency are improved substantially and open circuit voltage of the solar cell is increased, so that photoelectric converting efficiency of the solar cell is improved. The solar cell provided by the invention is low in cost, simple in preparation technique, and can be applied to mass industrial production and has a wide application range.

Description

technical field [0001] The invention relates to a solar cell and a preparation method thereof, in particular to a cuprous oxide-based heterojunction solar cell and a preparation method thereof, and belongs to the technical field of solar cells. Background technique [0002] Nowadays, human's demand for sustainable power generation has promoted people's research on new photovoltaic materials, and the scientific community has been committed to finding materials with good performance and low cost. A recent report shows that nine inorganic semiconductor materials are considered to have both excellent power generation potential and the advantage of lower material extraction costs than crystalline silicon. Among them, the application potential of cuprous oxide in traditional solar panels and integrated solar cells has received great attention. Cuprous oxide is an intrinsic p-type semiconductor material, which is caused by acceptor energy levels formed by copper vacancies inside i...

Claims

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Application Information

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IPC IPC(8): H01L31/072H01L31/0336H01L31/18
CPCH01L31/0336H01L31/072H01L31/18Y02E10/50Y02P70/50
Inventor 朱丽萍牛文哲
Owner ZHEJIANG UNIV
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