An ultraviolet photodetection device based on pfh/n‑sic organic‑inorganic heterostructure
A heterogeneous structure and ultraviolet light technology, which is applied in the fields of electrical solid-state devices, semiconductor/solid-state device manufacturing, photovoltaic power generation, etc., can solve the problems that the preparation method of ultraviolet photodetector devices has not been reported, and achieve excellent photoelectric characteristics, stable performance, dark The effect of small current
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Embodiment 1
[0031] Proceed as follows:
[0032] (1) Put the ITO transparent conductive glass sheet into V(HF):V(H 2 o 2 )=1:5 solution for 15 seconds (to remove the natural oxide layer), then ultrasonic cleaning with acetone, ethanol and deionized water for 15 minutes, and vacuum drying.
[0033] (2) Place the n-type SiC target with a purity of 99.9% on the target stage of the radio frequency magnetron sputtering system, fix the ITO substrate (half covered by the baffle) on the sample holder, and put it into the vacuum chamber, The distance between the SiC target and the ITO substrate was set at 4 cm.
[0034] (3) Vacuumize the chamber first, and when the ionization degree of the vacuum chamber is about 1.0×10-4Pa, pass in argon (Ar) to adjust the pressure in the vacuum chamber to 1.0Pa, then turn on the radio frequency power source and adjust the sputtering The spray power was 160w, followed by pre-sputtering for 5 minutes, and then the baffle was opened for formal sputtering. The sp...
Embodiment 2
[0039] Steps (1), (2), (4) and (5) are all the same as in Example 1. Step (3) Vacuum the chamber first, and when the ionization degree of the vacuum chamber is about 1.0×10-4Pa, pass in argon (Ar) to adjust the pressure in the vacuum chamber to 1.2Pa, then turn on the radio frequency power source, adjust The sputtering power was 160w, followed by pre-sputtering for 5 minutes, and then the baffle was opened for formal sputtering. The sputtering time was set to 3 hours, and the RF power source was turned off after the end. The thin film samples were taken out and transferred to a high temperature furnace for annealing at 1300°C for 4 hours, then cooled naturally.
[0040](6) Apply a voltage at both ends of the PFH / n-SiC heterostructure electrode to measure the photoelectric performance. The maximum voltage applied for V-I measurement is 2 volts, and the I-t curve is measured at a voltage of 0.5 volts. It is found that the control of the UV lamp switch, The current changes inst...
Embodiment 3
[0042] Steps (1), (2), (4) and (5) are all the same as in Example 1. Step (3) Vacuum the chamber first, and when the ionization degree of the vacuum chamber is about 1.0×10-4Pa, pass in argon (Ar) to adjust the pressure in the vacuum chamber to 1.2Pa, then turn on the radio frequency power source, adjust The sputtering power was 150w, followed by pre-sputtering for 5 minutes, and then the baffle was opened for formal sputtering. The sputtering time was set to 5 hours, and the RF power source was turned off after the end. The thin film samples were taken out and transferred to a high temperature furnace for annealing at 1350°C for 4 hours, then cooled naturally.
[0043] (6) Apply a voltage at both ends of the PFH / n-SiC heterostructure electrode to measure the photoelectric performance. The maximum voltage applied for V-I measurement is 2 volts, and the I-t curve is measured at a voltage of 0.5 volts. It is found that the control of the UV lamp switch, The current changes ins...
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