A kind of preparation method of vertical structure LED chip based on Gan thick film

Abstract

The invention discloses a GaN thick film-based vertical structure LED chip and a manufacturing method thereof. An LED epitaxial wafer with a 20-100mum thick film is adopted, and firmness of the device structure is greatly improved; a laser scribing and planar dielectric filling process is adopted for reducing damages of laser stripping and difficulty of a subsequent chip process, and the yield is improved; a periodic metallic nanostructure is used, the formed surface plasmons and dipoles of LED multiple quantum wells generate resonance, the internal quantum efficiency is improved, and as ITO is contacted with a p-type contact layer in a large area, electrical properties are not influenced; and as for an electrode, the contact layer technology and a PdInNiAu metal structure are creatively used, contact performance and stability are improved. In view of features of the thick film vertical structure LED chip, a current spreading layer and an electrode structure are designed, and current distribution uniformity is further improved.

Description

technical field [0001] The invention relates to the field of semiconductor chip preparation, in particular to a GaN thick film-based vertical structure LED chip and a preparation method thereof. Background technique [0002] Gallium nitride GaN-based vertical structure light-emitting diode LED has very broad application prospects in the field of high-power lighting. The common technical method is to prepare the p-side electrode and other structures from the GaN film grown on sapphire, bond it to a Si-based or Cu-based substrate, and then use laser lift-off to remove the sapphire, and prepare an n-electrode on the N-side. However, there are certain problems in the common vertical structure LED process: mainly because of the reliability of the nitrogen surface contact after stripping, there are certain problems due to the diffusion of Ga atoms, and because the thickness of the vertical structure LED epitaxial wafer is relatively thin, it is difficult to withstand the packaging...

AI Technical Summary

Problems solved by technology

However, there are certain problems in the common vertical structure LED process: mainly because of the reliability of the nitrogen surface contact after stripping, there are certain problems due to the diffusion of Ga atoms, and because the thickness of the vertical structure LED epitaxial wafer is relatively thin, it is difficult to withstand the packaging process. The impact force of the suction nozzle and needle tip of the die-bonding and wire-bonding process on the vertical structure chip

Our previous technology also mentioned the preparation of periodic or non-periodic nano-metal nanoparticles on the surface of p-GaN by nanoimprinting to enhance the luminous efficiency of LEDs, but there is no specific structure and method for increasing the luminous efficiency of LEDs. Preparation method for further elaboration

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