Microwave plasma-based treatment method and system for surface modification of copper indium gallium selenide (CIGS)

A microwave plasma, copper indium gallium selenide technology, applied in ion implantation plating, metal material coating process, vacuum evaporation plating, etc., can solve the problem of uneven distribution of Ga content along the depth, and achieve the reduction of unevenness Effect

Inactive Publication Date: 2015-11-25
PEKING UNIV
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Problems solved by technology

[0003] Aiming at the problems that Cu-Se is easy to form on the surface of the CIGS thin film existing in the prior art and Ga content is unevenly distributed along the depth, the present invention provides a kind of based on microwave electron cyclotron resonance (ElectronCyclotronResonance, ECR) plasma (this plasma B

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  • Microwave plasma-based treatment method and system for surface modification of copper indium gallium selenide (CIGS)
  • Microwave plasma-based treatment method and system for surface modification of copper indium gallium selenide (CIGS)

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Embodiment Construction

[0034] The present invention will be further described through the embodiments below in conjunction with the accompanying drawings.

[0035] Such as figure 1 As shown, the treatment system for surface modification of copper indium gallium selenide in this embodiment includes: microwave power source 1, transmission system 2, waveguide to coaxial 3, microwave plasma generation chamber 4, microwave plasma generation magnetic field coil 5 , a deflection yoke, a sample holder 7, and a vacuum chamber 8; wherein, the microwave power source 1 emits microwaves; the microwaves are transmitted to the waveguide-to-coaxial 3 through the transmission system 2; the waveguide-to-coaxial 3 feeds the microwaves into the microwave plasma generation chamber 4; The microwave plasma generation chamber 4 is wound with a microwave plasma generation magnetic field coil 5; the microwave plasma generation chamber 4 is connected to the vacuum chamber 8; the vacuum chamber 8 is provided with a sample hold...

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Abstract

The invention discloses a microwave plasma-based treatment method and system for surface modification of copper indium gallium selenide (CIGS).According to the invention, microwave plasma is generated through microwave ionization of inert gases and acts on the surface of a CIGS film. By micron dimension high-strength resputtering and annealing, Cu-Se phase on the surface can be removed and the film can be further annealed, so that non-uniformity of Ga can be relieved, and the purpose of material surface modification can be achieved. The CIGS film serves as a main absorption layer of a CIGS solar cell. The quality of the film directly determines the quality of the CIGS solar cell. The CIGS film subjected to ECR (Electron Cyclotron Resonance) modification lays a foundation for obtaining a CIGS cell with higher photoelectric conversion efficiency, and is feasible and practical as proved through experimental verification.

Description

technical field [0001] The invention relates to the field of solar cell preparation, in particular to a treatment method and system for modifying the surface of copper indium gallium selenium based on microwave plasma. Background technique [0002] In the manufacturing process of copper indium gallium selenide CIGS battery, the core and most critical process is the selenization annealing process of the copper indium gallium selenide prefabricated layer. The key reason for this process is that after the annealing process, the components inside and on the surface of the copper indium gallium selenide film as the main absorption layer are basically fixed, and it is easy to form a copper Cu-selenium Se phase on the surface, which makes the reaction incomplete and impurities appear. The energy level affects the efficiency of the battery; and, along the depth direction, the content of gallium Ga is high near the Mo back electrode, and the content near the surface is low, resulting...

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Application Information

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IPC IPC(8): C23C14/35C23C14/16
Inventor 焦飞赵夔
Owner PEKING UNIV
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