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Visible-near-infrared ultra-broadband absorber and preparation method

An ultra-broadband and absorber technology, which is applied to instruments, instrument parts, shielding, etc., can solve problems such as low absorption rate and complicated preparation process, and achieve the effects of shortened production cycle, good absorption performance, and reduced production cost

Active Publication Date: 2017-11-17
上海高能煜镀科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The absorptivity of the coating is lower than 0.9, and the preparation process is complicated

Method used

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  • Visible-near-infrared ultra-broadband absorber and preparation method
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  • Visible-near-infrared ultra-broadband absorber and preparation method

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preparation example Construction

[0035] A preparation method of an ultra-broadband absorber in the visible-near-infrared band, comprising the following steps, such as figure 2 Shown:

[0036] 1) According to the required absorber bandwidth requirements and absorption rate requirements, by optimizing the thickness of each layer of film, design a film system that meets the requirements;

[0037] 2) put the substrate into the acetone solution for 8 minutes, then clean the substrate with ethanol; then put the substrate (substrate) into the ethanol solution for 8 minutes, then clean the substrate with deionized water; finally clean the substrate Put it in deionized water for 8 minutes, and then wash the substrate again with deionized water;

[0038] 3) Vacuum coating technology is used to deposit each film layer in sequence to obtain an ultra-broadband absorber in the visible-near infrared band;

[0039] The ultra-broadband absorption of the ultra-broadband absorber in the visible-near-infrared band of the pres...

Embodiment 1

[0041] Embodiment 1: Visible-near-infrared band ultra-broadband absorber, the expected absorption bandwidth is 400nm-2500nm, and the absorption rate of each wavelength is more than 90%. The absorption spectrum of the absorber sample prepared by the present invention is as follows Figure 4 As shown, the average absorption rate is above 96.82%, and the corresponding structure is S=1, 7 layers of Cr / Ge / Cr / Ge / Si / TiO 2 / MgF 2 Thin-film structure, the corresponding substrate material is silicon wafer, and the thickness of each film layer is 200nm (chromium), 52nm (germanium), 21nm (chromium), 33nm (germanium), 34nm (silicon) from bottom to top. , 57nm (titanium dioxide), 111nm (magnesium fluoride).

Embodiment 2

[0042] Embodiment 2: Visible-near-infrared band ultra-broadband absorber, the expected absorption bandwidth is 400nm-3000nm, and the absorption rate of each wavelength is more than 90%. The absorption spectrum of the film system designed by the present invention is as follows Figure 5 As shown, the average absorption rate is above 94.9%, and the corresponding structure is S=2, 9 layers of Cr / Ge / Cr / Ge / Cr / Ge / Si / TiO 2 / MgF 2 Thin-film structure, the corresponding substrate material is silicon wafer, and the thickness of each film layer is 200nm (chromium), 72nm (germanium), 22nm (chromium), 55nm (germanium), 15nm (chromium) from bottom to top. , 36nm (germanium), 37nm (silicon), 57nm (titanium dioxide), 110nm (magnesium fluoride).

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Abstract

The invention discloses an ultra-broadband absorber in the visible-near-infrared band and a preparation method thereof. The absorber consists of a substrate, a bottom metal absorption layer, a germanium layer / metal absorption layer alternating film layer, a top germanium layer, and a top germanium layer. Three layers of broadband anti-reflection coating with gradually decreasing refractive index. Based on the incident blocking effect of the metal absorption layer combined with the wide-band anti-reflection film layer of the germanium layer, the invention constructs a wide-band non-transmission anti-reflection structure, and realizes high-efficiency, angle-insensitive ultra-broadband absorption in the visible-near-infrared band , completely surpassing the traditional absorber in performance. The absorber of the present invention is a compact multi-layer thin film structure. Compared with the traditional broadband absorber and the artificial electromagnetic absorber proposed in recent years, the structure is simpler, the complex nano-processing technology is avoided, and the production cost is significantly reduced. The cycle is significantly shortened, which is convenient for large-scale and batch production.

Description

technical field [0001] The invention belongs to the fields of stray light elimination, space detection, imaging, light-to-heat conversion, electromagnetic absorption, etc., and specifically relates to an ultra-broadband absorber in the visible-near-infrared band. Background technique [0002] Since the visible-infrared broadband absorber can play an important role in many different new fields, the visible-infrared broadband absorber has been extensively studied in recent years, so that more and more broadband absorbers have been prepared. In recent years, researchers have proposed various near-infrared absorbers for electromagnetic waves with artificial electromagnetic structures. Among them, Chen et al. used the droplet evaporation method to form randomly arranged gold nanorods on a metal substrate coated with a dielectric layer to achieve high absorption in the near-infrared 900nm-1600nm band (Near-infrared broadband absorber with film-coupledmultilayer nanorods, Optics L...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G12B17/04
Inventor 沈伟东杨陈楹章岳光方波刘旭
Owner 上海高能煜镀科技有限公司
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