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A kind of ultra-broadband absorber and preparation method of visible-near-infrared band

An absorber and ultra-broadband technology, applied in the fields of photothermal conversion and electromagnetic absorption, space detection, stray light elimination, and imaging, it can solve the problems of low absorption rate and complex preparation process, and achieve shortened production cycle, good absorption performance, Good incidence angle insensitivity effect

Active Publication Date: 2017-12-22
上海高能煜镀科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The absorptivity of the coating is lower than 0.9, and the preparation process is complicated

Method used

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  • A kind of ultra-broadband absorber and preparation method of visible-near-infrared band
  • A kind of ultra-broadband absorber and preparation method of visible-near-infrared band
  • A kind of ultra-broadband absorber and preparation method of visible-near-infrared band

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preparation example Construction

[0035] A preparation method of an ultra-broadband absorber in the visible-near-infrared band, comprising the following steps, such as figure 2 Shown:

[0036] 1) According to the required absorber bandwidth requirements and absorption rate requirements, by optimizing the thickness of each layer of film, design a film system that meets the requirements;

[0037] 2) put the substrate into the acetone solution for 8 minutes, then clean the substrate with ethanol; then put the substrate (substrate) into the ethanol solution for 8 minutes, then clean the substrate with deionized water; finally clean the substrate Put it in deionized water for 8 minutes, and then wash the substrate again with deionized water;

[0038] 3) Vacuum coating technology is used to deposit each film layer in sequence to obtain an ultra-broadband absorber in the visible-near infrared band;

[0039] The ultra-broadband absorption of the ultra-broadband absorber in the visible-near-infrared band of the pres...

Embodiment 1

[0041] Embodiment 1: Visible-near-infrared band ultra-broadband absorber, the expected absorption bandwidth is 400nm-1200nm, and the average absorption rate is more than 98%. The absorption spectrum of the absorber sample prepared by the present invention is as follows: Figure 4 As shown in (a), the average absorption rate is above 98.75%. The corresponding base material is a silicon wafer, and the corresponding film materials are sequentially chromium, germanium, silicon, titanium dioxide, and magnesium fluoride. The corresponding film layers of each film layer The thicknesses are 200nm (chromium), 18nm (germanium), 19nm (silicon), 35nm (titanium dioxide), and 80nm (magnesium fluoride).

Embodiment 2

[0042] Embodiment 2: Visible-near-infrared band ultra-broadband absorber, the expected absorption bandwidth is 400nm-2000nm, and the absorption rate of each wavelength is more than 90%. The absorption spectrum of the absorber sample prepared by the present invention is as follows Figure 4 As shown in (b), the average absorption rate is above 97.75%. The corresponding base material is a silicon wafer, and the corresponding film layer materials are sequentially chromium, germanium, silicon, titanium dioxide, and magnesium fluoride. The film corresponding to each film layer The layer thicknesses are 200nm (chromium), 33nm (germanium), 32nm (silicon), 56nm (titanium dioxide), 118nm (magnesium fluoride), respectively.

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Abstract

The present invention disclosed a visible -ultra -broadband absorber and its preparation methods near -infrared bands, including: visible -ultra -broadband absorbers with nearly infrared bands consist of bases and five layers of optical film. The bottom thin film is a metal absorption layer.On the metal absorption layer is the layer, and the remaining three layers are on the top layer, and the refractive index from the bottom to the top material gradually decreases.The invention is based on the blocking incident effect of the metal absorption layer combined with the width wave segment reduction anti -membrane layer of the layer to build a non -transmitted anti -reducing structure of the wide -wave band, which realizes the high -efficiency and unsightly visible angle -nearly infrared band ultra -broadband absorptionIt has completely surpassed the traditional absorbers in terms of performance.The absorber of the present invention is a compact multi -layer thin film structure. Compared with the traditional broadband absorber and the artificial electromagnetic absorbers proposed in recent years, the structure is simpler, avoiding complex nano -processing technology, the production cost has decreased significantly, production is produced, production is produced.The cycle is significantly shortened, which is convenient for large -scale and mass production.

Description

technical field [0001] The invention belongs to the fields of stray light elimination, space detection, imaging, light-to-heat conversion, electromagnetic absorption, etc., and specifically relates to an ultra-broadband absorber in the visible-near-infrared band. Background technique [0002] Since the visible-infrared broadband absorber can play an important role in many different new fields, the visible-infrared broadband absorber has been extensively studied in recent years, so that more and more broadband absorbers have been prepared. In recent years, researchers have proposed various near-infrared absorbers for electromagnetic waves with artificial electromagnetic structures. Among them, Chen et al. used the droplet evaporation method to form randomly arranged gold nanorods on a metal substrate coated with a dielectric layer to achieve high absorption in the near-infrared 900nm-1600nm band (Near-infrared broadband absorber with film-coupledmultilayer nanorods, Optics L...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B5/00G02B1/113
Inventor 沈伟东杨陈楹章岳光方波刘旭
Owner 上海高能煜镀科技有限公司
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