A kind of method that sol-gel method prepares rutile titanium dioxide nano film

A rutile titanium dioxide, sol-gel method, applied in chemical instruments and methods, chemical/physical processes, physical/chemical process catalysts, etc. The problem of high raw material waste rate, to achieve the effect of stable structure, long gel time and lower production cost

Inactive Publication Date: 2017-10-17
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the process of preparing thin films by the sol-gel method, the gelation time of the precursor sol is short (1-2 days), and it is usually used and prepared immediately, which makes it difficult to ensure the consistency of precursors in different batches. high waste rate

Method used

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  • A kind of method that sol-gel method prepares rutile titanium dioxide nano film
  • A kind of method that sol-gel method prepares rutile titanium dioxide nano film
  • A kind of method that sol-gel method prepares rutile titanium dioxide nano film

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Embodiment 1

[0017] A kind of sol-gel method prepares the method for rutile titanium dioxide nano film, specifically comprises the following steps:

[0018] Step 1: Tetrabutyl titanate (Ti(OBu) 4 ) is a solute, and the mixed solution of monoethanol ammonia, ethylene glycol methyl ether and acetone is a solvent, and the concentration of tetrabutyl titanate for preparation is a precursor solution of 0.1mol / L; wherein, monoethanol ammonia, ethylene glycol methyl ether The volume ratio with acetone is 1:1:0.5;

[0019] Step 2: Add acetylacetone to the precursor solution obtained in step 1 as a chelating agent, glycerol as a tackifier, and magnetically stir at room temperature to obtain a transparent and uniform sol; wherein, the molar ratio of tetrabutyl titanate to acetylacetone It is 1:1, and the volume percentage of glycerol is 5%;

[0020] Step 3: Spin-coat the sol obtained in Step 2 on the cleaned silicon wafer at a spin-coating speed of 2000 rpm, and then dry it in an oven at 200°C to ...

Embodiment 2

[0022] A kind of sol-gel method prepares the method for rutile titanium dioxide nano film, specifically comprises the following steps:

[0023] Step 1: Tetrabutyl titanate (Ti(OBu) 4 ) is a solute, and the mixed solution of monoethanol ammonia, ethylene glycol methyl ether and acetone is a solvent, and the concentration of tetrabutyl titanate for preparation is a precursor solution of 0.2mol / L; wherein, monoethanol ammonia, ethylene glycol methyl ether The volume ratio with acetone is 1:1:0.5;

[0024] Step 2: Add acetylacetone to the precursor solution obtained in step 1 as a chelating agent, glycerol as a tackifier, and magnetically stir at room temperature to obtain a transparent and uniform sol; wherein, the molar ratio of tetrabutyl titanate to acetylacetone It is 1:3, and the volume percentage of glycerol is 5%;

[0025] Step 3: Spin-coat the sol obtained in Step 2 on the cleaned silicon wafer at a spin-coating speed of 3000 rpm, and then dry it in an oven at 275°C to ...

Embodiment 3

[0027] A kind of sol-gel method prepares the method for rutile titanium dioxide nano film, specifically comprises the following steps:

[0028] Step 1: Tetrabutyl titanate (Ti(OBu) 4 ) is a solute, and the mixed solution of monoethanol ammonia, ethylene glycol methyl ether and acetone is a solvent, and the concentration of tetrabutyl titanate for preparation is a precursor solution of 0.4mol / L; wherein, monoethanol ammonia, ethylene glycol methyl ether The volume ratio with acetone is 1:1:0.5;

[0029] Step 2: Add acetylacetone to the precursor solution obtained in step 1 as a chelating agent, glycerol as a tackifier, and magnetically stir at room temperature to obtain a transparent and uniform sol; wherein, the molar ratio of tetrabutyl titanate to acetylacetone It is 1:2, and the volume percentage of glycerol is 5%;

[0030] Step 3: Spin-coat the sol obtained in Step 2 on the cleaned silicon wafer at a spin-coating speed of 2000 rpm, and then dry it in an oven at 200°C to ...

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Abstract

The invention discloses a method for preparing a rutile titanium dioxide nanometer film by a sol-gel method, which belongs to the technical field of film preparation. First, use tetrabutyl titanate (Ti(OBu)4) as the solute, and a mixture of monoethanolamine, ethylene glycol methyl ether and acetone as the solvent to prepare a precursor with a tetrabutyl titanate concentration of 0.1-1mol / L solid solution, wherein the volume ratio of monoethanol ammonia, ethylene glycol methyl ether and acetone is 1:1:0.5; then add acetylacetone as a chelating agent and glycerol as a tackifier, and stir to obtain a transparent and uniform sol; Finally, through spin coating and high-temperature sintering, a rutile titanium dioxide nanometer film is obtained on the silicon wafer. The method of the invention has the advantages of low cost, simple process, good repeatability and large-scale production.

Description

technical field [0001] The invention belongs to the technical field of film preparation, and in particular relates to a method for preparing a rutile titanium dioxide nano film by a sol-gel method. Background technique [0002] Nano-TiO 2 Semiconductor thin films have semiconductor properties such as photoelectric conversion and charge transport that are unmatched by other materials, and have been widely used in solar cells, sensors, photocatalysis and other fields. Titanium dioxide (TiO 2 ) has three crystal forms of brookite, rutile and anatase, among which rutile TiO 2 The most stable, both anatase and brookite can transform into rutile phase during high temperature sintering, rutile phase TiO 2 With large dielectric constant and small loss, it is an ideal material for making varistors for micro-motor noise reduction. [0003] At present, the preparation methods of titanium dioxide nano-film mainly include magnetron sputtering, electron beam evaporation, chemical vapo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J21/06B01J35/10C04B41/50
Inventor 廖宇龙王晓艺张怀武钟智勇文天龙杨青慧
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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