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Method for preparing plasma enhanced chemical vapor deposition (PECVD) silicon nitride protective film on surface of photoetching mask

A technology of silicon nitride protective film and photolithography mask, which is applied in the field of integrated circuits, can solve the problems of low process temperature, achieve the effects of low process temperature, prolong service life, and reduce damage

Inactive Publication Date: 2015-12-23
TIANSHUI TIANGUANG SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to solve the problems existing in the prior art, and to provide a method for preparing a PECVD deposited silicon nitride protective film on the surface of a photolithography mask. The process temperature for depositing silicon nitride by plasma enhanced chemical vapor deposition (PECVD) is Low, fast deposition speed, uniform deposition film, low defect density of the film, which can greatly reduce the damage of the mask and prolong the service life

Method used

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  • Method for preparing plasma enhanced chemical vapor deposition (PECVD) silicon nitride protective film on surface of photoetching mask
  • Method for preparing plasma enhanced chemical vapor deposition (PECVD) silicon nitride protective film on surface of photoetching mask
  • Method for preparing plasma enhanced chemical vapor deposition (PECVD) silicon nitride protective film on surface of photoetching mask

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Effect test

Embodiment 1

[0033] A method for preparing a PECVD deposited silicon nitride protective film on the surface of a photolithography mask, comprising the following process steps:

[0034] (1) Prepare the photolithography mask and polished silicon wafer to be produced;

[0035] (2) Clean the surface of the photolithographic mask and polished silicon wafer. The specific process of cleaning is: heat the photolithographic mask and polished silicon wafer to 80°C with a mass concentration of 92% sulfuric acid for 15 minutes, Rinse with deionized water for 20min, and use N 2 Blow dry and put it into a special quartz plate rack; dry the polished silicon wafer with a dryer for 7 minutes, and put it in a special flower basket for later use;

[0036] (3) Put the cleaned photolithography mask and polished silicon wafer into an oven and bake for 10 minutes at a baking temperature of 75°C;

[0037] (4) Put the baked photolithographic mask and clean polished silicon wafer into the PECVD cavity, requiring ...

Embodiment 2

[0046] A method for preparing a PECVD deposited silicon nitride protective film on the surface of a photolithography mask, comprising the following process steps:

[0047] (1) Prepare the photolithography mask and polished silicon wafer to be produced;

[0048] (2) Clean the surface of the photolithographic mask and polished silicon wafer. The specific cleaning process is: heat the photolithographic mask and polished silicon wafer to 90°C with a mass concentration of 90% sulfuric acid for 20 minutes. Rinse it with deionized water for 25min, and wash the photolithography mask with N 2 Blow dry and put it into a special quartz plate rack; dry the polished silicon wafer with a dryer for 8 minutes, and put it in a special flower basket for later use;

[0049] (3) Put the cleaned photolithography mask and polished silicon wafer into an oven and bake for 15 minutes at a baking temperature of 70°C;

[0050] (4) Put the baked photolithographic mask and clean polished silicon wafer i...

Embodiment 3

[0059] A method for preparing a PECVD deposited silicon nitride protective film on the surface of a photolithography mask, comprising the following process steps:

[0060] (1) Prepare the photolithography mask and polished silicon wafer to be produced;

[0061] (2) Clean the surface of the photolithographic mask and polished silicon wafer. The specific cleaning process is: heat the photolithographic mask and polished silicon wafer to 70°C with a mass concentration of 95% sulfuric acid for 10 minutes. Rinse with deionized water for 15 minutes, and then cover the photolithography mask with N 2 Blow dry and put it into a special quartz plate rack; dry the polished silicon wafer with a dryer for 6 minutes, and put it in a special flower basket for later use;

[0062] (3) Put the cleaned photolithography mask and polished silicon wafer into an oven and bake for 5 minutes at a baking temperature of 80°C;

[0063] (4) Put the baked photolithographic mask and clean polished silicon ...

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Abstract

The invention belongs to the technical field of an integrated circuit, and relates to a method for preparing a plasma enhanced chemical vapor deposition (PECVD) silicon nitride protective film on the surface of a photoetching mask. The process for depositing silicon nitride on the photoetching mask by a PECVD method has the advantages of low temperature, high deposition speed and uniform deposited thin film, the defect density of a thin film is relatively low, the damage degree of the mask can be greatly reduced, the service life of the mask is prolonged; and moreover, during the contact exposure process, the service life of the photoetching mask provided with silicon nitride thin film protection can be obviously prolonged by more than twice when compared with a mask with no silicon nitride protection, and the abrasive resistance of a silicon wafer surface can be also improved.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits and relates to a method for preparing a PECVD deposited silicon nitride protective film on the surface of a photolithography mask. Background technique [0002] From input to output, a qualified integrated circuit product has to go through multiple alignment processes in the middle, and various bad patterns will be produced during the processing, especially in the case of contact exposure, the probability of bad patterns is higher. Frequent use of photolithography masks on the production process line, or improper operations by operators will cause continuous wear or local damage to the masks, which will have a serious adverse effect on the yield of chips. The method of frequently replacing the mask will undoubtedly increase the cost, especially the quartz-based mask commonly used in the production site is relatively expensive, and it is unrealistic to frequently replace the mask. In o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/48C23C16/04C23C16/34C23C16/513
Inventor 安彪张晓情杜林德邓春茂杨虹
Owner TIANSHUI TIANGUANG SEMICON
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