Precursor solution for preparing semiconductor electro-thermal film, electro-thermal film and preparation method of electro-thermal film

A technology of precursor solution and electric heating film, which is applied in the direction of electric heating devices, ohmic resistance heating, electrical components, etc., can solve the problems of insufficient stability of film formation, insufficient ability to withstand thermal stress, easy cracking or falling off, etc., to promote heat resistance Capability of impact and thermal stress, great market promotion prospect, effect of shortening production cycle

Active Publication Date: 2016-01-06
深圳市热客派尔热力科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The following technical problems mainly exist in the prior art: (1) Insufficient film formation stability
Existing spraying or other coating methods make the electrothermal film not closely bonded to the substrate, and it is easy to crack or fall off under the action of external force or thermal stress; when the film is formed by PVD or CVD method, the requirements for equipment are high, and the production cost is increased. It is not conducive to the low price requirements of daily products; (2) When forming a large area of ​​film, the film forming efficiency is low, especially when the film is formed by spraying, the spraying rate and area are limited, multiple spraying is required, and the film thickness is high. Long film forming period; (3) The grains in the thickness direction are not uniform, and the ability to withstand thermal stress is insufficient

Method used

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  • Precursor solution for preparing semiconductor electro-thermal film, electro-thermal film and preparation method of electro-thermal film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-1

[0067] The configuration of the precursor solution of the prepared semiconductor electrothermal film includes by weight parts:

[0068] Tin tetrachloride 40

[0069] Nano tin dioxide 15

[0070] Antimony trichloride 3

[0071] Hydrofluoric acid 2.5

[0072] Boric acid 1.8

[0073] Potassium chloride 0.4

[0074] Triethanolamine 0.5

[0075] ethanol 50

[0076] Wherein, the nano tin dioxide is amorphous tin dioxide particles with an average particle diameter of 20nm.

Embodiment 1-2

[0078] The configuration of the precursor solution of the prepared semiconductor electrothermal film is the same as that of Example 1-1 in terms of parts by weight.

[0079] The difference is that the nano-tin dioxide is amorphous tin dioxide particles with an average particle diameter of 50nm.

Embodiment 1-3

[0081] The configuration of the precursor solution of the prepared semiconductor electrothermal film is the same as that of Example 1-1 in terms of parts by weight.

[0082] The difference is that the nano tin dioxide is amorphous tin dioxide particles with an average particle diameter of 100nm.

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Abstract

The invention discloses a precursor solution for preparing a semiconductor electro-thermal film, the electro-thermal film and a preparation method of the electro-thermal film. The preparation method comprises the following steps: firstly, providing a precursor solution for preparing the semiconductor electro-thermal film formed by mixing tin tetrachloride, nanometer tin dioxide, antimony trichloride, hydrofluoric acid, boric acid, potassium chloride, triethanolamine and relevant solvents; and secondly, providing a film forming process combining a spray film forming process and a dipping process assisted by a gradient heat treatment process in order to obtain the semiconductor electro-thermal film which has high film forming quality and is suitable for large-size production. Binding force between the electro-thermal film and a substrate is enhanced, and the electro-thermal film with a high thermal shock resistance is obtained. The uniformity and film-making efficiency of large-area film formation are improved. The electro-thermal film with a large square resistance adjustable range is obtained in order to meet different industry demands.

Description

technical field [0001] The invention belongs to the field of electrothermal films, and in particular relates to a precursor solution for preparing a semiconductor electrothermal film, an electrothermal film and a preparation method thereof. Background technique [0002] Traditional electric heating materials, such as metal tungsten, molybdenum, nickel and their alloys, have disadvantages such as large amount of consumables, short service life, difficult processing and forming, and unstable working conditions. In recent years, it has been gradually replaced by new electrothermal materials and devices. Among them, electrothermal film is gradually replacing traditional electrothermal materials in more and more fields. [0003] The electrothermal film is a planar heating material, which forms a maximum heat conduction surface with the heated body, and has a small heat transfer resistance. When heating with electricity, the heat can be quickly transferred to the heated body, an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05B3/34H05B3/14
Inventor 韦建中葛金生贺旭辉
Owner 深圳市热客派尔热力科技有限公司
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