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Er-Yb-codoped A12O3-Ag bilayered upconversion luminescence thin film and preparation method thereof

A technology of luminescent film and double-layer film, which is applied in the field of photoluminescence and solar cells, can solve the problems affecting the enhancement of upconversion luminescence, and achieve the effect of enhancing the performance of upconversion luminescence, high repeatability and good process stability

Inactive Publication Date: 2016-01-20
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It has also been reported that noble metals are prepared on substrates by sputtering, on which up-conversion materials are deposited [11] , but this method will cause diffusion and agglomeration of noble metals during the annealing process of forming up-conversion luminescent materials, which will affect the enhancement of up-conversion luminescence

Method used

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  • Er-Yb-codoped A12O3-Ag bilayered upconversion luminescence thin film and preparation method thereof
  • Er-Yb-codoped A12O3-Ag bilayered upconversion luminescence thin film and preparation method thereof
  • Er-Yb-codoped A12O3-Ag bilayered upconversion luminescence thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Preparation of Er﹑Yb co-doped Al 2 o 3 Thin film: Among them, Er: 0.8 mol%, Yb: 10 mol%. The substrate temperature is room temperature, the oxygen partial pressure in the sputtering gas accounts for 1.8% of the total gas pressure, the sputtering pressure is 0.8Pa, and the sputtering power density is 106kW / m 2 , the thickness of the film is 500nm, and it is annealed in air at 1000°C for 150min.

[0040] The pump source for measuring luminescence is a 980nm semiconductor laser with a power of 2W and incident on the surface of the film at an angle of 45°.

[0041] image 3 It is the upconversion luminescence spectrum of the thin film sample in Example 1 excited by the pump source.

Embodiment 2

[0043] Preparation of Er﹑Yb co-doped Al 2 o 3 / Ag double-layer film, in which, Er: 1mol%, Yb: 20mol%, Al 2 o 3 Other film preparation conditions are the same as in Example 1, and the film thickness is 500nm;

[0044] Preparation of Ag film: substrate temperature is room temperature, sputtering gas is argon, sputtering pressure is 0.6Pa, sputtering power density is 7.1kW / m 2 . Ag film thickness (a) 0nm, (b) 14nm.

[0045] Figure 4 It is the upconversion luminescence spectrum of the thin film sample in Example 2 excited by the pump source.

Embodiment 3

[0047] Preparation of Er﹑Yb co-doped Al 2 o 3 / Ag bilayer film, in which, Er: 0.5mol%, Yb: 5mol%, Al 2 o 3 Other film preparation conditions are the same as in Example 1, and the film thickness is 500nm;

[0048] Preparation of Ag film: substrate temperature is room temperature, sputtering gas is argon, sputtering pressure is 0.6Pa, sputtering power density is 5.3kW / m 2 . Ag film thickness (a) 0nm, (b) 14nm.

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Abstract

The invention belongs to the technical field of photoluminescence and solar cells, and particularly provides an Er-Yb-codoped A12O3-Ag bilayered upconversion luminescence thin film and a preparation method thereof. The preparation method comprises the steps that a bilayered thin film is prepared on a quartz or silicon substrate, an Er-Yb-codoped A12O3 thin film serves as the bottom layer, deposition is performed by adopting a radio frequency sputtering technique, an A12O3 ceramic target inlaid with an Er sheets and a Yb sheet is adopted as a sputtering target, and the Er-Yb doping amount is controlled by controlling the area and sputtering power of the Er sheet and the Yb sheet at a sputtering region; a noncontinuous Ag film serves as the top layer, deposition is performed by adopting a direct-current magnetron sputtering technique, an Ag target is adopted as a target, and an Ag film with different surface appearances can be obtained by controlling the A g sputtering power and time. Compared with an Er-Yb-codoped A12O3 single-layer thin film, the prepared double-layer thin film has the obviously-enhanced upconversion luminescence performance. The preparation method is good in technological stability and high in repeatability and has the industrial production prospect.

Description

technical field [0001] The invention belongs to the technical field of photoluminescence and solar cells, in particular to rare earth doped Al 2 o 3 / Ag double-layer up-conversion luminescent film and its preparation method. Background technique [0002] Up-conversion luminescence is anti-Stokes luminescence realized by absorbing two or more photons with longer wavelengths and emitting one photon with shorter wavelengths. Rare earth ion doped up-conversion luminescent materials in optical communication, color display, data storage [1] ﹑Solid state laser [2] ﹑Solar battery [3] and other related fields have been widely used and attracted more and more attention [4][5] . At present, most of the research is Er 3+ doped system, however Er 3+ The small absorption cross-section for near-infrared photons makes it difficult to increase the intensity of upconversion luminescence, thus limiting its application in the above fields. Introducing Yb into the matrix material 3+ Fo...

Claims

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Application Information

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IPC IPC(8): C09K11/64C23C14/35C23C14/08C23C14/16B32B9/04B32B15/00
Inventor 沈杰任锦华王俊郑明扬
Owner FUDAN UNIV
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