Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Negative photosensitive resin composition

A technology of photosensitive resin and resin composition, which is applied in the direction of optics, optomechanical equipment, instruments, etc., can solve the problems of poor adhesion of display panels or touch panels, volume shrinkage of resin compositions, and failure to apply, etc., to achieve Easy to develop and moisture resistance, good adhesion, high temperature resistance and transparency

Active Publication Date: 2019-12-03
EVERLIGHT CHEMICAL INDUSTRIAL CORPORATION
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is currently known that the photosensitive resin composition mainly composed of acrylic resin or silicone resin will produce serious yellowing phenomenon in the high temperature process, and cause the shrinkage of the volume of the resin composition, and then cause the display panel or touch panel. Problems such as poor adhesion
In addition, known components such as protective layers or passivation layers also need to improve the anti-etching properties of ITO etchant to ensure the adhesion of the ITO layer or metal orientation, so they cannot be applied to ITO with high transparency and high conductivity. In the process of display panel or touch panel

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Negative photosensitive resin composition
  • Negative photosensitive resin composition
  • Negative photosensitive resin composition

Examples

Experimental program
Comparison scheme
Effect test

preparation example 1

[0032] Preparation Example 1- Preparation of Polysiloxane Compound A-1

[0033] Take 83.2 grams of tetraethoxysilane, 40.92 grams of methyltrimethoxysilane, 30.44 grams of dihydro-3-[3-(triethoxysilyl) propyl] furan-2,5-dione , and 39.66 grams of phenyltrimethoxysilane were stirred in 172 grams of diacetone alcohol (DAA) solvent, slowly dripped into 54 grams of phosphoric acid aqueous solution (0.0092 grams of H 3 PO 4 After being dissolved in 54 grams of water), the temperature was raised to 110° C. to carry out a condensation polymerization reaction, and the reaction time was 2 hours. After the reaction was completed, alcohol and water were removed by distillation, and the obtained polysiloxane compound A-1 had a solid content of 45% and a molecular weight of 3800 g / mol.

preparation example 2

[0034] Preparation Example 2- Preparation of Polysiloxane Compound A-2

[0035] Take 52.0 grams of tetraethoxysilane, 13.64 grams of methyltrimethoxysilane, 15.22 grams of dihydro-3-[3-(triethoxysilyl) propyl] furan-2,5-dione , and 118.98 grams of phenyltrimethoxysilane were stirred in 172 grams of diacetone alcohol (DAA) solvent, and slowly dripped into 54 grams of phosphoric acid aqueous solution (0.0092 grams of H 3 PO 4After being dissolved in 54 grams of water), the temperature was raised to 110° C. to carry out a condensation polymerization reaction, and the reaction time was 2 hours. After the reaction was completed, alcohol and water were removed by distillation, and the obtained polysiloxane compound A-2 had a solid content of 45% and a molecular weight of 2000 g / mol.

preparation example 3

[0036] Preparation Example 3- Preparation of Polysiloxane Compound A-3

[0037] This preparation example is roughly the same as the above-mentioned preparation example 2, except that tetraethoxysilane is not used as a monomer in the synthesis in this preparation example, but 47.66 grams of methyltrimethoxysilane, 15.22 gram of dihydro-3-[3-(triethoxysilyl)propyl]furan-2,5-dione, and 118.98 grams of phenyltrimethoxysilane were stirred in 172 grams of PGMEA solvent, Slowly drop into 54 grams of phosphoric acid aqueous solution (0.0092 grams of H 3 PO 4 After being dissolved in 54 grams of water), the temperature was raised to 110° C. to carry out a condensation polymerization reaction, and the reaction time was 2 hours. After the reaction was completed, alcohol and water were removed by distillation, and the obtained polysiloxane compound A-3 had a solid content of 45% and a molecular weight of 2500 g / mol.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a negative-type photosensitive resin composition, which comprises (A) polysiloxane compound in 5 to 25 weight percentage; (B) silicate oligomer in 0.1 to 20 weight percentage; (C) photoacid generator in 0.1 to 10 weight percentage; and (D) a solvent as the balance. The negative-type photosensitive resin composition has the advantages of high heat resistance, high transparency, high chemical resistance and high humidity resistance.

Description

technical field [0001] The invention relates to a negative photosensitive resin composition, in particular to a negative photosensitive resin composition suitable for high temperature process. Background technique [0002] In the production process of display panels and touch panels, various photosensitive resin compositions such as positive or negative have been used as materials, and their photosensitive properties are used to pattern and harden these resin compositions to form passivation layers. Components such as protective layers or insulating layers. [0003] In view of the fact that the transparent conductive layer (such as indium tin oxide, ITO) as a panel component is required to achieve high transparency and high conductivity, the temperature during sputtering of ITO also needs to be higher and higher. The firing temperature is as high as 280°C, and components used as protective layers or passivation layers also need to withstand high temperatures in this process...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/075
Inventor 林钧雯杨宗翰陈鹏文周俊钦林伯南蓝大钧张志毅林昭文
Owner EVERLIGHT CHEMICAL INDUSTRIAL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com