Glass film containing rare-earth-ion-doped Cs2LiLaBr6 microcrystalline and preparation method thereof
A technology of rare earth ions and glass thin films, applied in the field of glass thin films, can solve problems such as device limitations, achieve the effects of promoting generation, high transmittance, and overcoming incomplete uniformity
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Embodiment 1
[0043] Cs doped with rare earth ions 2 LiLaBr 6 The preparation method of the glass thin film of crystallite comprises following specific steps:
[0044] (1), prepare raw materials in molar ratio: tetraethoxygermanium: butyl titanate: niobium ethoxide: cesium bromide: lithium bromide: lanthanum bromide: cerium bromide = 64: 20: 14: 16: 8: 8 : 1, taking by weighing a total amount of analytically pure raw materials of 30 grams, stand-by;
[0045] (2), the hydrolysis of tetraethoxygermanium: the tetraethoxygermanium weighed in the step (1) is dissolved in dehydrated alcohol, and the mol ratio of dehydrated alcohol and tetraethoxygermanium is 2: 1, fast Add acetylacetone, the volume ratio of acetylacetone to tetraethoxygermanium is 0.7:1, and carry out strong magnetic stirring, gradually drop distilled water, the molar ratio of distilled water to tetraethoxygermanium is 0.6:1, carry out hydrolysis at room temperature React for 1 hour to make solution A;
[0046] (3), hydrolysi...
Embodiment 2
[0056] It is basically the same as Example 1, except that in the step (1), the raw materials are prepared according to the following molar ratio: tetraethoxygermanium: butyl titanate: niobium ethylate: cesium bromide: lithium bromide: lanthanum bromide: bromide Europium=64:16:8:24:12:12:4, each preparation raw material is weighed respectively; In step (8), the pulling speed of the glass substrate in the gel solution is controlled at 1 mm / s, and the pulling speed is repeated 5 times, each pulling interval is 15 minutes; in step (9), be warming up to 100 ℃ with the rate of 50 ℃ per hour, then heat up the furnace to 340 ℃ with the rate of 50 ℃ per hour; ), gradually raise the temperature of the furnace to 640°C, and react at this temperature for 2 hours to obtain Eu-containing 3+ Ion-doped Cs 2 LiLaBr 6 Microcrystalline 64Al 2 o 3 -16TiO 2 -4Nb 2 o 5 -12Cs 2 LiLaBr 6 -4EuBr 3 System glass film.
[0057] For prepared Eu-containing 3+ Ion-doped Cs 2LiLaBr 6 Spectral p...
Embodiment 3
[0059] It is basically the same as Example 1, except that in the step (1), the raw materials are prepared according to the following molar ratio: tetraethoxygermanium: butyl titanate: niobium ethylate: cesium bromide: lithium bromide: lanthanum bromide: bromide Terbium=64:19:10:20:10:10:2, weigh each preparation raw material respectively; in step (8), the pulling speed of the glass substrate in the gel solution is controlled at 0.6 mm / s, and the pulling speed is repeated 3 times, each pulling interval is 15 minutes; in step (9), the rate of 40 ℃ per hour is heated to 100 ℃, and then the furnace is heated to 340 ℃ with the rate of 40 ℃ per hour; in step (10 ), gradually raise the temperature of the furnace to 630°C, and react at this temperature for 3 hours to obtain Tb-containing 3+ Ion-doped Cs 2 LiLaBr 6 Microcrystalline 64GeO 2 -19TiO 2 -5Nb 2 o 5 -10Cs 2 LiLaBr 6 -2TbBr 3 System glass film.
[0060] For prepared Tb-containing 3+ Ion-doped Cs 2 LiLaBr 6 Spectra...
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