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Counter electrode for quantum dot-sensitized solar cells and preparation method thereof

A solar cell and quantum dot sensitization technology, which is applied in the field of solar energy utilization and nanomaterials, can solve the problems of poor electrode stability, high electrode cost, and low catalytic performance, and achieve good adhesion, low cost, and high catalytic activity. Effect

Inactive Publication Date: 2019-01-08
HENAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The problem to be solved by the present invention is to provide a low-cost, high catalytic activity, simple preparation process, large-scale Area-fabricated Pb for QDSSC x Cu 1-x S counter electrode and preparation method thereof

Method used

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  • Counter electrode for quantum dot-sensitized solar cells and preparation method thereof
  • Counter electrode for quantum dot-sensitized solar cells and preparation method thereof
  • Counter electrode for quantum dot-sensitized solar cells and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] (1) Preparation of Pb x Cu 1-x S counter electrode

[0029] 1) Clean the substrate

[0030] Put the FTO conductive glass substrate into ethanol, acetone and deionized water with detergent for 15 minutes to remove the dust and grease on the surface of the substrate, and then put it into deionized water for 15 minutes to wash away the dirt. detergent and some inorganic pollutants, rinse with deionized water for 15 minutes, and finally blow dry with nitrogen for later use.

[0031] 2) Preparation of chemical bath deposition solution

[0032] Dissolve 4.74 g (12.5 mmol) of lead acetate, 2 g (50 mmol) of sodium hydroxide, 1.52 g (20 mmol) of thiourea, and 1.49 g (10 mmol) of triethanolamine in 400 ml of deionized water, and stir to form a solution a. Dissolve 0.64 g (3.75 mmol) of copper chloride and 1.19 g (8 mmol) of triethanolamine in 100 ml of deionized water and stir well to form solution B. Then solution A was slowly added to solution B under stirring conditions, a...

Embodiment 2

[0040] (1) Preparation of Pb x Cu 1-x S counter electrode

[0041] 1) Clean the substrate

[0042] With embodiment 1.

[0043] 2) Preparation of chemical bath deposition solution

[0044] With embodiment 1.

[0045] 3) Deposit Pb on the surface of conductive glass substrate x Cu 1-x S counter electrode

[0046] Fix the cleaned FTO conductive glass substrate on a special fixture, then immerse the substrate vertically in the deposition solution, seal the beaker containing the solution with aluminum foil, and place it on a magnetic stirrer at room temperature for deposition reaction, deposition 4 After an hour, take out the FTO substrate, rinse it with deionized water, and dry it in an oven for use. Use a scanning electron microscope to test its thickness to be 324 nm. This electrode is named Pb x Cu 1-x S-4.

[0047] (2) Preparation of porous TiO sensitized by CdSe quantum dots 2 Photoanode (TiO 2 / CdSe)

[0048] With embodiment 1.

[0049] (3) Assemble and test qu...

Embodiment 3

[0052] (1) Preparation of Pb x Cu 1-x S counter electrode

[0053] 1) Clean the substrate

[0054] With embodiment 1.

[0055] 2) Preparation of chemical bath deposition solution

[0056] With embodiment 1.

[0057] 3) Deposit Pb on the surface of conductive glass substrate x Cu 1-x S counter electrode

[0058] Fix the cleaned FTO conductive glass substrate on a special fixture, then immerse the substrate vertically in the deposition solution, seal the beaker containing the solution with aluminum foil, and place it on a magnetic stirrer at room temperature for deposition reaction, deposition 7 After an hour, take out the FTO substrate, rinse it with deionized water, and dry it in an oven for later use. The thickness of the electrode is 582 nm as measured by a scanning electron microscope. This electrode is named Pb x Cu 1-x S-7.

[0059] (2) Preparation of porous TiO sensitized by CdSe quantum dots 2 Photoanode (TiO 2 / CdSe)

[0060] With embodiment 1.

[0061] (...

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Abstract

The invention discloses a counter electrode for a quantum-dot sensitized solar cell and a manufacturing method thereof. According to the counting scheme of the invention, the structure of the counter electrode is that a catalyst layer formed by PbS and CuS grows on the surface of an FTO conductive glass substrate, and the catalyst layer is manufactured by adopting a low-temperature chemical bath deposition method. the problems that the existing Pt counter electrode is high in cost and low in catalytic performance and a metal sulfide counter electrode is poor in stability and not easy to package are solved, and the counter electrode manufactured in the invention is low in cost, high in catalytic activities and simple in manufacturing process.

Description

Technical field: [0001] The invention belongs to the field of solar energy utilization, and also belongs to the field of nanometer materials, in particular to a Pb used for quantum dot sensitized solar cells x Cu 1-x S counter electrode and preparation method thereof Background technique: [0002] Facing the depletion of fossil energy and the serious environmental pollution caused by its use, inexhaustible solar energy has become an important countermeasure to solve this problem. Among all kinds of new solar cells, quantum dot-sensitized solar cells (QDSSC) with simple preparation process and low cost have attracted extensive attention of researchers. Compared with dye sensitizers, quantum dots have unique advantages such as adjustable energy band structure, higher extinction coefficient, larger intrinsic dipole moment and exciton multiplication effect (A. Kongkanand, et al., J . Am. Chem. Soc., 2008, 130, 4007). Therefore, the study of QDSSCs is of great significance fo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/20H01G9/042
Inventor 宋孝辉王小梅
Owner HENAN NORMAL UNIV