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Manufacturing method of silicon nitride film and mim capacitor

A technology of silicon nitride thin film and manufacturing method, which is applied in the direction of capacitors, circuits, electrical components, etc.

Active Publication Date: 2020-12-25
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is no longer applicable when applied to 0.18μm high voltage process or BCD process

Method used

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  • Manufacturing method of silicon nitride film and mim capacitor
  • Manufacturing method of silicon nitride film and mim capacitor
  • Manufacturing method of silicon nitride film and mim capacitor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Embodiment 1 of the present invention introduces a new manufacturing method of silicon nitride thin film, figure 2 It is a flow chart of the silicon nitride thin film manufacturing method in Embodiment 1 of the present invention, combined below figure 2 Embodiment 1 of the present invention will be described in detail.

[0040] Step 201, providing a substrate.

[0041] The substrate provided in this embodiment may be a simple silicon substrate, or a silicon substrate on which metal oxide semiconductor transistors have been formed, or a substrate on which an underlying metal wiring structure has been formed.

[0042] Step 202, depositing a silicon nitride film on the substrate in two steps by plasma-enhanced chemical vapor deposition, including:

[0043] Step 1, pre-deposition, the pre-deposition has a relatively low deposition rate. Optionally, the lower deposition rate is The parameter setting of the pre-deposition includes: the temperature is 380-420° C., the pr...

Embodiment 2

[0047] Combine below image 3 The manufacturing method of the MIM capacitor according to the embodiment of the present invention is described.

[0048] First, in step 301, a substrate is provided. The substrate may be a simple silicon substrate, or a silicon substrate on which metal oxide semiconductor transistors have been formed, or a substrate on which an underlying metal wiring structure has been formed.

[0049] Next, in step 302, a lower electrode metal layer is formed on the substrate.

[0050] Optionally, the material of the lower electrode metal layer is selected from one or more alloys of copper, aluminum, gold, silver, tungsten and other metals. The bottom electrode metal layer has a thickness of 4000 to 6000 angstroms, for example The lower electrode metal layer can be formed by any method known to those skilled in the art, such as electrochemical plating, magnetron sputtering or physical deposition.

[0051] Next, in step 303 , a silicon nitride film is forme...

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Abstract

The invention provides a method for manufacturing a silicon nitride film, comprising: providing a substrate; and depositing a silicon nitride film on the substrate in two steps by using a plasma-enhanced chemical vapor deposition method, including: step 1, pre-deposition, The pre-deposition has a relatively low deposition rate; step 2, performing the main deposition until the predetermined thickness of the silicon nitride film is reached, and the main deposition has a relatively high deposition rate. The present invention also provides a method for manufacturing an MIM capacitor, which adopts the above-mentioned method to prepare a silicon nitride film as a capacitor insulating layer. By adopting the method of the invention, the deposited silicon nitride film has high compactness, reduces the occurrence probability of voids in the silicon nitride film, remarkably improves breakdown voltage, reduces leakage current, and further improves device reliability and yield.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a silicon nitride film and an MIM capacitor. Background technique [0002] Capacitors are widely used in semiconductor integrated circuits as charge storage, coupling and filter devices. Among existing integrated circuit capacitors, metal-insulator-metal (MIM, Metal-Isolation-Metal) capacitors have gradually become the mainstream in radio frequency integrated circuits, especially in the mixing / radio frequency CMOS process. The reason is that it is usually made in the metal interconnection layer, which is compatible with the integrated circuit process and has a long distance from the substrate, which can overcome the large parasitic capacitance of many other types of capacitors and the degradation of device performance with increasing frequency. Significant downsides. [0003] MIM capacitors are usually located on the upper layer of a multilayer...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02274H01L21/0217H01L28/40
Inventor 雷天飞秦仁刚
Owner CSMC TECH FAB2 CO LTD