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Film resistor and preparation method thereof

A technology of thin film resistors and resistive layers, which is applied in thin film resistors, resistors, resistor manufacturing, etc., and can solve problems such as thin film resistor failure and general moisture resistance of the protective layer

Active Publication Date: 2016-02-24
GUANGDONG FENGHUA ADVANCED TECH HLDG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, thin film resistors use thick film technology to form a protective layer. The material of the protective layer is generally epoxy resin. The moisture resistance of the protective layer is average, and the resistance layer of thin film resistors is usually only 50nm~1000nm. Immersed into the inside of the protective layer, it is easy to cause the failure of the thin film resistor

Method used

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  • Film resistor and preparation method thereof

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preparation example Construction

[0044] The preparation method of above-mentioned film resistor, comprises the following steps:

[0045] Step S1 , preparing two surface electrodes 120 spaced apart from each other on the surface 112 of the insulating substrate 110 .

[0046] The insulating substrate 110 is a ceramic insulating substrate or a glass insulating substrate. Preferably, the insulating substrate 110 is an aluminum oxide ceramic substrate with a purity of 96 wt % to 99.9 wt %, more preferably an aluminum oxide ceramic substrate with a purity of 99 wt % to 99.9 wt %.

[0047] It should be noted that, according to the performance requirements of the insulating substrate 110 , the insulating substrate 110 can also be modified, and a modified layer is deposited on the surface of the insulating substrate 110 to improve the flatness of the insulating substrate 110 surface. The material of the modified layer is silicide, which is formed by thin film deposition techniques such as thermal evaporation depositi...

Embodiment 1

[0085] Fabricate thin film resistors as follows:

[0086] (1) Two surface electrodes 120 are formed on the surface 112 of the insulating substrate 110 by screen printing, and two back electrodes 130 are formed on the back surface 114 of the insulating substrate 110 by screen printing.

[0087] The insulating substrate 110 is a ceramic insulating substrate, and the purity (mass percentage) of the substrate is 99-99.9% Al 2 o 3 Ceramic substrate.

[0088] The surface electrode 120 is made of silver and silver-palladium alloy, and the palladium content (accounting for the mass percentage of the conductive electrode paste) is 20%.

[0089] The material of the back electrode 130 is silver and silver-palladium alloy, and the palladium content (accounting for the mass percentage of the conductive electrode paste) is 0.5%.

[0090] (2) Forming the resistance layer 140 on the surfaces of the surface electrodes 120 and the insulating substrate 110 .

[0091] The material of the resi...

Embodiment 2

[0105] Fabricate thin film resistors as follows:

[0106] (1) Two surface electrodes 120 are formed by screen printing on the surface 112 of the insulating substrate 110 , and a back electrode 130 is formed on the back surface 114 of the insulating substrate 110 by screen printing.

[0107] The insulating substrate 110 is a ceramic insulating substrate, and the purity (mass percentage) of the substrate is 96-99.9% Al 2 o 3 Ceramic substrate.

[0108] The surface electrode 120 is made of silver and silver-palladium alloy, and the palladium content (accounting for the mass percentage of the conductive electrode paste) is 30%.

[0109] The material of the back electrode 130 is silver and silver-palladium alloy, and the palladium content (accounting for the mass percentage of the conductive electrode paste) is 0.75%.

[0110] (2) Forming the resistance layer 140 on the surfaces of the surface electrodes 120 and the insulating substrate 110 .

[0111] The material of the resist...

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Abstract

The invention discloses a film resistor and a preparation method thereof. The film resistor comprises an insulation substrate of which the surface forms two surface electrodes at an interval, a resistor layer which is formed on the surface of the insulation substrate, is connected to the two surface electrodes and covers a part of the surfaces of the surface electrodes, a film dielectric layer which covers the surface of the resistor layer and comprises at least one of silica, silicon nitride, tantalum-silicon alloy, titanium-silicon alloy and aluminum-silicon alloy, and a protection layer which completely covers the surface of the film dielectric layer and extends to the insulation substrate and surface electrode surfaces. The film resistor has good moisture resistance.

Description

technical field [0001] The invention relates to a thin film resistor and a preparation method thereof. Background technique [0002] After the resistance layer of the traditional thin film resistor is formed into a film, it is directly subjected to heat treatment aging and laser repair, and then sealed with a sealant for protection. In the past many product use reports, thin film resistors are prone to failure phenomena such as open circuit and excessive resistance value in humid environment. In the thin film resistor manufacturing process, packaging is an extremely important process, and most of the failures are caused by the unsatisfactory packaging process. In actual use, the performance aging and failure of thin film resistors are mainly caused by the comprehensive effects of temperature, humidity and electrical stress. When there is moisture in the thin film resistive layer, the voltage will cause metal electromigration and accelerate the aging process. [0003] At p...

Claims

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Application Information

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IPC IPC(8): H01C7/00H01C17/075H01C17/12H01C17/14
CPCH01C7/00H01C7/006H01C17/075H01C17/12H01C17/14
Inventor 李国贵林伯流范文新杨泽明林瑞芬张远生杨晓平
Owner GUANGDONG FENGHUA ADVANCED TECH HLDG
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